DB3 STMICROELECTRONICS | Alldatasheet
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Technical content
DB3 /DB4 / DC34 April 1995 TRIGGER DIODES DO 35 (Glass) VBO : 32V / 34V / 40V VERSIONS LOW BREAKOVER CURRENT
FEATURES
Symbol Parameter Value Unit R th (j-a) Junction to ambient 400 °C/W R th (j-l) Junction-leads 150 °C/W High reliability glass passivation insuring parameter stability and protection against junction contamination.
DESCRIPTION
Symbol Parameter Value Unit P Power dissipation on printed circuit (L = 10 mm) Ta = 65°C 150 mW I TRM Repetitive peak on-state current tp = 20 µs F= 100 Hz Tstg Tj Storage and operating junction temperature range -4 0t o + 1 2 5 -4 0t o + 1 2 5 ABSOLUTE RATINGS (limiting values) THERMAL RESISTANCES
Symbol Parameter Test Conditions Value Unit DB3 DC34 DB4 VBO Breakover voltage * C = 22nF see diagram 1 MIN 28 30 35 V TYP 32 34 40 MAX 36 38 45 [I+VBO I-I-VBO I] Breakover voltage symmetry C = 22nF see diagram 1 MAX ± 3V IΔV± I Dynamic breakover voltage * ΔI=[ IBO to IF=10mA] see diagram 1 MIN 5 V VO Output voltage * see diagram 2 MIN 5 V IBO Breakover current * C = 22nF ** MAX 100 50 100 µA tr Rise time * see diagram 3 TYP 1.5 µs IB Leakage current * V B =0 . 5VBO max see diagram 1 MAX 10 µA * Electrical characteristic applicable in both forward and reverse directions. ** Connected in parallel with the devices. ELECTRICAL CHARACTERISTICS (Tj = 25°C) DIAGRAM 1 : Current-voltage characteristicsDIAGRAM 2 : Test circuit for output voltage DIAGRAM 3 : Test circuit see diagram 2. Adjust R for lp=0.5A 10mA IBO IB-V + V +I F -IF 0,5 VBO VBO V 10 k 500 k 220 V 50 Hz 0.1 F D.U.T VO R=2 0 90 % lp 10 % tr DB3 / DB4 / DC34
0 1 02 03 04 05 06 07 08 09 0 1 0 0 1 1 0 1 2 0 1 3 0 Tamb ( C)o o P (mW) Fig.1 :Power dissipation versus ambient tempera- ture (maximum values) 25 50 75 100 125 Tj( C) o 1.08 1.06 1.04 1.02 1.00 VBO[Tj] VBO[Tj=25 C] o Fig.2 :Relative variation of VBO versus junction temperature(typical values) 0.01 0.1 10 100 1000 10000 tp ( s)
2 F = 100 Hz
Tj initial = 25 Co I (A)TRM Fig.3 :Peak pulse current versus pulse duration (maximum values) DB3 / DB4 / DC34
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are notauthorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. 1995 SGS-THOMSON Microelectronics - All rights reserved. Purchase of I 2C Components by SGS-THOMSON Microelectronics, conveys a license under the Philips I2C Patent. Rights to use these components in an I2C system, is granted provided that the system conforms to the I2C Standard Specifications as defined by Philips. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. Cooling method by convection and conduction Marking : type number Weight : 0.15 g PACKAGE MECHANICAL DATA (in millimeters) DO 35 Glass Polarity : N A Stud torque : N A note 2 BA B C note 1note 1 D D O/ O/ E E REF. DIMENSIONS NOTES Millimeters Inches Min. Max. Min. Max. A 3.050 4.500 0.120 0.117 1 - The lead diameter∅ D is not controlled over zone E 2 - The minimum axial lengh within which the device may be placed with its leads bent at right angles is 0.59”(15 mm) B 12.7 0.500 ∅ C 1.530 2.000 0.060 0.079 ∅ D 0.458 0.558 0.018 0.022 E 1.27 0.050 DB3 / DB4 / DC34