DC0521PZD2 GWSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 4
Technical content
Features
Ultra small package: 1.0 x0.6 x0.5mm Protects one data or power line Ultra low leakage：nA level Operating voltage：5V Low clamping voltage 2-pin leadless package Complies with following standards: – IEC 61000-4-2 (ESD) immunity test Air discharge: ±30kV Contact discharge: ±30kV – IEC61000-4-5 (Lightning) 8A (8/20µs) RoHS Compliant Case Material: “Green” Molding Compound. Moisture Sensitivity: Level 3 per J-STD-020 Mechanical Characteristics Pin Configuration PB Marking Information DC0521PZ D2 1-Line B i-directional TVS Diode The DC0521PZD2 is a bi-directional TVS diode, utilizing leading monolithic silicon technology to provide fast response time and low ESD clamping voltage, making this device an ideal solution for protecting voltage sensitive data and power line. The DC0521PZD2 complies with the IEC 61000-4-2 (ESD) standard with ±30kV air and ±30kV contact discharge. It is assembled into an ultra-small 1.0x0.6x0.5mm lead-free DFN package. The small size and high ESD surge protection make DC0521PZD2 an ideal choice to protect cell phone, digital cameras, audio players and many other portable applications.
Description
Absolute Maximum Ratings (TA=25°C unless otherwise specified) Parameter Symbol Value Unit Peak Pulse Power(8/20µs) Ppk 100 W Peak Pulse Current(8/20µs) IPP 8 A ESD per IEC 61000−4−2 (Air) ESD per IEC 61000−4−2 (Contact) VESD ±30 ±30 kV Operating Temperature Range TJ −55 to +125 °C Storage Temperature Range Tstg −55 to +150 °C Electrical Characteristics (TA=25°C unless otherwise specified) Parameter Symbol Min Typ Max Unit Test Condition Reverse Working Voltage V RWM 5 V Breakdown Voltage VBR 6 8 V I T = 1mA Reverse Leakage Current I R 0.2 µA V RWM = 5V Clamping Voltage VC 8 V I PP = 1A (8 x 20µs pulse) Clamping Voltage VC 12.5 V I PP = 8A (8 x 20µs pulse) Junction Capacitance C J 15 pF VR = 0V, f = 1MHz DC0521PZ D2
Typical Performance Characteristics (TA=25℃ unless otherwise Specified) Junction Capacitance vs. Reverse Voltage Peak Pulse Power vs. Pulse Time Clamping Voltage vs. Peak Pulse Current (tp = 8/20μs) Power Derating Curve ESD Clamping Voltage 8 kV Contact per IEC61000−4−2
8 X 20μs Pulse Waveform
e 0.65 BSC 0.026 BSC L1 0.05REF 0.002REF DC0521PZ D2 Plastic surface mounted package; 2 leads -2L PACKAGE OUTLINE DFN1006