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Document overview

  • Manufacturer or author: Diodes Incorporated
  • PDF pages: 6

Technical content

Features

  • Epitaxial Planar Die Construction
  • Ideally Suited for Automated Assembly Processes
  • Lead Free By Design/RoHS Compliant (Note 1)
  • "Green" Device (Note 2)
  • Ultra Small Package Mechanical Data
  • Case: SOT-963
  • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0
  • Moisture Sensitivity: Level 1 per J-STD-020D
  • Terminals: Finish  Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208
  • Marking Information: See Page 5
  • Ordering Information: See Page 5
  • Weight: 0.0027 grams (approximate) Maximum Ratings–Q1 NPN @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5 V Collector Current – Continuous IC 100 mA Base Current IB 30 mA Maximum Ratings–Q2 PNP @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -5 V Collector Current - Continuous IC -100 mA Base Current IB -30 mA Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 3) PD 300 mW Thermal Resistance, Junction to Ambient (Note 3) RθJA 417 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: 1. No purposefully added lead. 3. Device mounted on FR-4 PCB with minimum recommended pad layout. Device Schematic Q1 Q2 5 4 31 2 Top View SOT-963 PART OBSOLETE – USE DST847BPDP6

Document number: DS31480 Rev. 4 - 4 2 of 6 www.diodes.com May 2021 © Diodes Incorporated DC0150ADJ / DC0150BDJ OBSOLETE – PART DISCONTINUED Electrical Characteristics–Q1 NPN @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage V(BR)CBO 60 — — V IC = 10µA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO 50 — — V IC = 1mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO 5 — — V IE = 10µA, IC = 0 Collector Cut-Off Current ICBO — — 0.1 µA VCB = 60V, IE = 0 Emitter Cut-Off Current IEBO — — 0.1 µA VEB = 5V, IC = 0 ON CHARACTERISTICS (Note 4) Collector-Emitter Saturation Voltage VCE(SAT) — 0.10 0.25 V IC = 100mA, IB = 10mA DC Current Gain DC0150ADJ DC0150BDJ hFE 120 — 240 — VCE = 6V, IC = 2mA 200 — 400 SMALL SIGNAL CHARACTERISTICS Transition Frequency fT 60 — — MHz VCE = 10V, IE = -1mA f = 30MHz Output Capactiance Cob — 1.3 — pF VCB = 10V, IE = 0, f = 1MHz Electrical Characteristics–Q2 PNP @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage V(BR)CBO -50 — — V IC = -10µA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO -50 — — V IC = -1mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO -5 — — V IE = -10µA, IC = 0 Collector Cut-Off Current ICBO — — -0.1 µA VCB = -50V, IE = 0 Emitter Cut-Off Current IEBO — — -0.1 µA VEB = -5V, IC = 0 ON CHARACTERISTICS (Note 4) Collector-Emitter Saturation Voltage VCE(SAT) — -0.15 -0.3 V IC = -100mA, IB = -10mA DC Current Gain DC0150ADJ DC0150BDJ hFE 120 — 240 — VCE = -6V, IC = -2mA 200 — 400 SMALL SIGNAL CHARACTERISTICS Transition Frequency fT 80 — — MHz VCE = -10V, IE = 1mA f = 30MHz Output Capactiance Cob — 1.6 — pF VCB = -10V, IE = 0, f = 1MHz Notes: 4. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle ≤2% P , POWER DISSIPATION (W)D T , AMBIENT TEMPERATURE ( C)A ° Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3) 100 150 200 250 25 50 75 100 125 150 300 R = 417°C/WθJA 100 1,000 0.1 1 10 100 -V , COLLECTOR-EMITTER VOLTAGE (V)CE Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage (Note 3) -I , COLLECTOR CURRENT (mA)C Pw = 100ms Pw = 10ms DC

Document number: DS31480 Rev. 4 - 4 3 of 6 www.diodes.com May 2021 © Diodes Incorporated DC0150ADJ / DC0150BDJ OBSOLETE – PART DISCONTINUED 0.1 10 100 1,000 I , COLLECTOR CURRENT (mA)C Fig. 3 Typical DC Current Gain vs. Collector Current (DC0150BDJ-NPN) 100 1,000h , DC CURRENT GAIN FE T = 150°CA T = 25°CA T = -55°CA T = 85°CA V = 6VCE 0.01 0.1 0.0001 0.001 0.01 0.1 1 I , COLLECTOR CURRENT (A)C Fig. 4 Typical Collector-Emitter Saturation Voltage vs. Collector Current (DC0150BDJ-NPN) V , COLLECTOR-EMITTER SATURATION CE(SAT) VOLTAGE (V) I /I = 10CB T = 85°CA T = 25°CA T = -55°CA T = 150°CA I , COLLECTOR CURRENT (A)C Fig. 5 Typical Base-Emitter Turn-On Voltage vs. Collector Current (DC0150BDJ-NPN) V , BASE-EMITTER TURN-ON VOLTAGE (V)BE(ON) 0.0001 0.001 0.01 0.1 1 0.2 0.4 0.6 0.8 1.0 1.2 T = 150°CA T = 25°CA T = -55°CA T = 85°CA I = 10CB/I I , COLLECTOR CURRENT (A)C Fig. 6 Typical Base-Emitter Saturation Voltage vs. Collector Current (DC0150BDJ - NPN) V , BASE-EMITTER SATURATION VOLTAGE (V)BE(SAT) 0.0001 0.001 0.01 0.1 1 0.2 0.4 0.6 0.8 1.0 1.2 T = 150°CA T = 25°CA T = -55°CA T = 85°CA V = 6VCE 100 0.1 1 10 100 V , REVERSE VOLTAGE (V)R Fig. 7 Typical Capacitance Characteristics (DC0150BDJ - NPN) CAPACITANCE (pF) Cibo Cobo f = 1MHz 120 160 200 240 280 320 0 2 4 6 8 10 I , COLLECTOR CURRENT (mA)C Fig. 8 Typical Gain-Bandwidth Product vs. Collector Current (DC0150BDJ - NPN) f , GAIN-BANDWIDTH PRODUCT (MHz)T V = 6V f = 30MHz CE

Document number: DS31480 Rev. 4 - 4 4 of 6 www.diodes.com May 2021 © Diodes Incorporated DC0150ADJ / DC0150BDJ OBSOLETE – PART DISCONTINUED 0.1 1 10 100 1,000 -I , COLLECTOR CURRENT (mA)C Fig. 9 Typical DC Current Gain vs. Collector Current (DC0510BDJ - PNP) 100 1,000h , DC CURRENT GAIN FE T = 150°CA T = 25°CA T = -55°CA T = 85°CA V = -6VCE 0.0001 0.001 0.01 0.1 1 -I , COLLECTOR CURRENT (A)C Fig. 10 Typical Collector-Emitter Saturation Voltage vs. Collector Current (DC0510BDJ - PNP) 0.01 0.1 -V , COLLECTOR-EMITTER SATURATION CE(SAT) VOLTAGE (V) I /I = 10CB T = 85°CA T = 25°CA T = -55°CA T = 150°CA -I , COLLECTOR CURRENT (A)C Fig. 11 Typical Base-Emitter Turn-On Voltage vs. Collector Current (DC0510BDJ - PNP) 0.0001 0.001 0.01 0.1 1 -V , BASE-EMITTER TURN-ON VOLTAGE (V)BE(ON) 0.2 0.4 0.6 0.8 1.0 1.2 T = 150°CA T = 25°CA T = -55°CA T = 85°CA V = -6VCE -I , COLLECTOR CURRENT (A)C Fig. 12 Typical Base-Emitter Saturation Voltage vs. Collector Current (DC0150BDJ - PNP) 0.0001 0.001 0.01 0.1 1 -V , BASE-EMITTER SATURATION VOLTAGE (V)BE(SAT) 0.2 0.4 0.6 0.8 1.0 1.2 T = 150°CA T = 25°CA T = -55°CA T = 85°CA I = 10CB/I 0.1 1 10 100 V , REVERSE VOLTAGE (V)R Fig. 13 Typical Capacitance Characteristics (DC0150BDJ - PNP) 100CAPACITANCE (pF) Cibo Cobo f = 1MHz 100 150 200 250 0 2 4 6 8 10 -I , COLLECTOR CURRENT (mA)C Fig. 14 Typical Gain-Bandwidth Product vs. Collector Current (DC0510BDJ - PNP) f , GAIN-BANDWIDTH PRODUCT (MHz)T V = -6V f = 30MHz CE

Document number: DS31480 Rev. 4 - 4 5 of 6 www.diodes.com May 2021 © Diodes Incorporated DC0150ADJ / DC0150BDJ OBSOLETE – PART DISCONTINUED Ordering Information (Note 5) Device Packaging Shipping DC0150ADJ-7 SOT-963 10,000/Tape & Reel DC0150BDJ-7 SOT-963 10,000/Tape & Reel Marking Information Package Outline Dimensions SOT-963 Dim Min Max Typ A 0.40 0.50 0.45 A1 0 0.05 - c 0.077 0.177 0.127 D 0.95 1.05 1.00 E 0.95 1.05 1.00 E1 0.75 0.85 0.80 L 0.05 0.15 0.10 b 0.10 0.20 0.15 e 0.35 Typ e1 0.70 Typ All Dimensions in mm xx= Product Type Marking Code: T1 = DC0150ADJ T2 = DC0150BDJ xx L c E D e b (5 places) A

Document number: DS31480 Rev. 4 - 4 6 of 6 www.diodes.com May 2021 © Diodes Incorporated DC0150ADJ / DC0150BDJ OBSOLETE – PART DISCONTINUED IMPORTANT NOTICE 1. DIODES INCORPORATED AND ITS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTIC ULAR PURPOSE OR NON- INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 2. The Information contained herein is for informational purpose only and is provided only to illustrate the operati on of Diodes products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engi neering customers and users who design with Diodes products. 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