DB3 SHUNYE | Alldatasheet
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The three layer,two terminal, axial lead, hermetically sealed diacs are designed specifically for triggering thyristors. They demonstrate low breakover current at breakover voltage as they withstand peak pulse current,The breakover symmetry is within three volts(DB3,DC34,DB4)or four volts(DB6).These diacs are intended for use in thyrisitors phase control, circuits for lamp dimming,universal motor speed control, and heat control. JF's DB3/DC34/DB4/DB6 are bi-directional trigged diode designed to operate in conjunction with Triacs and SCR's ABSOLUTE RATINGS(LIMITING VALUES) DB3 DC34 DB4 DB6 Power Dissipation on Printed Circuit(L=10mm) Repetitive Peak in-state tp=10u s Current F=100Hz T STG T J Storage and Operating Junction Temperature ELECTRCAL CHARACTERISTICS DB3 DC34 DB4 DB6 c=22nF(Note 2) Min 28 30 35 56 See diagram1 Typ 32 34 40 60 Max 36 38 45 70 |+VBO|- c=22nF(Note 2) |-VBO| See diagram1 I=( I BO to IF=10mA) See diagram1 Vo See diagram2 Min V IBO c=22nF(Note 2) Max A tr See Diagram 3 Typ S V B =0.5 V BO max see diagram 1 Notes: 1. Electrical characteristics applicable in both forward and reverse directions. 2. Connected in parallel with the devices. Parameters Symbols Units 2.0 2.0 1.6 Value Symbols Parameters -40 to +125/-40 to 110 mW A P c I TRM TA=50 150 2.0 VBO Breakover Voltage(Note 2) Output Voltage(Note 1) Breakover Current(Note 1) Max | V| IB Leakage Current(Note 1) Rise Time(Note 1) Value Dynamic Breakover Voltage(Note 1) Breakover Voltage Symmetry Units 3 4 Test Conditions Max Min V V V A 100 1.5 SILICON BIDIRECTIONAL DIAC DB3/DC34/DB4/DB6 www.shunyegroup.com.cn V2.22
DIAGRAM 1: Current-voltage charateristics DIAGRAM 2: Test circuit for output voltage DIAGRAM 3: Test circuit see diagram2 adjust R for Ip=0.5A FIG.1-Power disspation versus ambient temperature(maximum values) FIG.2-Relative variation of VBO versus juntion temperature(typical values) FIG.3-Peak pulse current versus pulse duration (maximum values) DB3/DC34/DB4/DB6 www.shunyegroup.com.cn V2.22