DB3 DGNJDZ | Alldatasheet
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DB3, DB4, DC34 Silicon Bidirectional Trigger Diodes These diacs are intended for use in thyristor phase control, circuits for lamp-dimming, universal-motor speed controls, and heat controls. Absolute Maximum Ratings (T a = 25 O Parameter Symbol Value Unit Power Dissipation (T a = 65 O C) P tot 150 mW Repetitive Peak On-state Current (tp = 20 µs, f = 100 Hz) I TRM 2 A Operating Junction and Storage Temperature Range T j , T stg - 40 to + 125 O C Characteristics at T a = 25 O C Parameter Symbol Min. Max. Unit DB3 28 36 DC34 30 38 Breakover Voltage at C = 22 nF, see diagram 1 DB4 V BO 35 45 V Breakover Voltage Symmetry at C = 22 nF, see diagram 1 [|+V BO |-|-V BO |] - 3 V Dynamic Breakover Voltage at ΔI = [I BO to I F Output Voltage See diagram 2 V O 5 - V Breakover Current at C = 22 nF I BO - 50 µA Leakage Current at V B = 0.5 V BO max I B - 10 µA Rise Time See diagram 3 t r - 2 µs Max. 3.9 Max. 1.9 Glass Case DO-35 Max. 0.5 Min. 27.5 Min. 27.5 XXX Part No. ST "ST" Brand Dimensions in mm Black Black
DB3, DB4, DC34