DB4 GXELECTRONICS | Alldatasheet
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Technical content
SILICON BIDIRECTIONAL DIAC
FEATURES
ABSOLUTE RATINGS(LIMITING VALUES)
ELECTRICAL CHARACTERISTICS
The three-layer, two-terminal, axial-lead, hermetically sealed diacs are designed specifically for triggering thyristors. They demonstrate low breakover current at breakover voltage as they withstand peak pulse current. The breakover symmetry is within three volts(DB3,DC34,DB4) or four volts(DB6). These diacs are intended for use in thyrisitors phase control , circuits for lamp dimming, universal motor speed control and heat control. JF's DB3/DC34/DB4/DB6 are bi-directional triggered diode designed to operate in conjunction with Triacs and SCR's Power Dissipation on Printed Circuit(L=10mm) Breakover Voltage (Note 2 ) Breakover Voltage Symmetry C=22nF(Note 2) See diagram 1 C=22nF(Note 2) See diagram 1 C=22nF(Note 2) Min Min Min Typ +4+3 5 10 100 1.5 Max Max Max Max Typ I=(IBO to IF=10mA) See Diagram 1 See Diagram 2 See Diagram 3 VB=0.5 VBO max see diagram 1 Breakover Current (Note1) Leakage Current (Note1) Dynamic Breakover Voltage (Note1) Rise Time (Note1) Output Voltage (Note 1 ) PC mW A TSTG/TJ TA=50 C tp=10ms f=100Hz Repetitive Peak on-state Current Storage and Operating Junction Temperature C V V V V mA ms mA ITRM VBO │+VBO│- │-VBO│ │+ V│ VO IBO IB tr DO-35(GLASS) Dimensions in inches and (millimeters) 0.150(3.8) MAX 1.083(27.5) MIN 1.083(27.5) MIN 0.079(2.0) MAX DIA 0.020(0.52) MAX DIA 2.0 2.0 2.0 1.6 150 Notes: 1.Electrical characteristics applicable in both forward and reverse directions. 2.Connected in parallel with the devices. Symbols Parameters Value DB3 DC34 DB4 DB6 Units Value DB3 DC34 DB4 DB6 UnitsParametersSymbols Test Condition MECHANICAL DATA Case: DO-35 glass case Weight: Approx. 0.13 gram JF High temperature soldering guaranteed:260℃/10 seconds at terminals -40 to+125/-40 to +110 XINGHE ELECTRONICS 星合电子 GAOMI XINGHE ELECTRONICSCO.,LTD. WWW.SDDZG.COM TEL:0536-2210359 QQ:464768017
DIAGRAM 1: Current-voltage characteristics FIG.1-Power dissipation versus ambient temperature (maximum values) FIG.3-Peak pulse current versus pulse duration (maximum values) FIG.2-Relative variation of VBO versus junction temperature(typical values) DIAGRAM 2: Test circuit for output voltage DIAGRAM 3: Test circuit see diagram2 adjust R for IP=0.5A 10mA IBO IB
0.5 VBO
IP90% 10% tr 10KW 220V 50Hz 500KW D.U.T R=20WVO 0.1mF V +IF -IF +V-V Tamb( C) P (mW) VBO(TJ) VBO(TJ=25 C) 0.01 0.1 100 1000 10000 10 20 30 40 60 70 80 100 110120 130 1.00 1.02 1.04 1.06 1.08 50 75 100 125 125 100 120 140 160 f=100Hz TJ initial=25 C ITRM(A) tp(ms) TJ( C) GAOMI XINGHE ELECTRONICSCO.,LTD. WWW.SDDZG.COM TEL:0536-2210359 QQ:464768017 DB3/DC34/DB4/DB6 SILICON BIDIRECTIONAL DIAC XINGHE ELECTRONICS 星合电子