DB3 EIC | Alldatasheet
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DB3, DB4 SILICON BI-DIRECTIONAL DIACS VBR : 32 - 40 Volts FEATURES : * VBR : 32 V and 40 V * Low breakover current * Pb / RoHS Free MECHANICAL DATA : * Case: DO-35 Glass Case * Weight: approx. 0.11g MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Ta = 25 °C) SYMBOL UNIT Minimum Breakover Voltage VBR1 and VBR2 (Min.) V Typical Breakover Voltage VBR1 and VBR2 (Typ.) V Maximum Breakover Voltage VBR1 and VBR2 (Max.) V Maximum Breakover Current I(BR)1 and I(BR)2 200 μA Maximum Breakover Voltage Symmetry [V(BR)1] - [V(BR)2] 3.8 V Minimum Dynamic Breakback Voltage ∆I = [IBR to IF = 10 mA] Maximum Peak Current at Ta = 50 °C (10 μs duration, 120 cycle repetition rate) Maximum Peak output Voltage at Ta = 50 °C eP ±3 V Thermal Impedance Junction to Ambient RӨJA 60 °C/W Operating Junction Temperature Range TJ - 40 to + 100 °C Storage Temperature Range TSTG - 40 to + 150 °C Page 1 of 1 Rev. 03: December 7, 2006 | ΔV ± | 5.0 V IP ±2 A 32 40 36 45 RATING DB3 DB4 28 35 DO - 35 Glass (DO-204AH) 0.079(2.0 )max. 0.150 (3.8) max. 0.020 (0.52)max. Dimensions in inches and ( millimeters ) 1.00 (25.4) min. 1.00 (25.4) min. CIRCUIT FOR PEAK OUTPUT VOLTAGE TEST www.eicsemi.com