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Technical content
Features
VBO : 40V Breakover voltage range : 35 to 45V
Applications
Functioning as a trigger diode with a fixed voltage reference, the DB4 can be used in conjunction with triacs for simplified gate control circuits or as a starting element in fluorescent lamp ballasts. All Dimensions in mm DO-35 Absolute Maximum Ratings (Limiting values) Parameter Symbol Value Unit Repetitive peak on-state current (tp=20μ s F=120 Hz) ITRM 2 A Operating junction temperature range Tj -40 ~ +125 ℃ Storage temperature range Tstg -40 ~ +125 ℃ Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only. Functional operation above the recommended operating conditions is not implied. Extended exposure to stresses above the recommended operating conditions may affect device reliability.
Electrical Characteristics
(Tj=25℃ unless otherwise specified) Parameter Symbol Test Conditions Value Unit MIN. 35 TYP. 40 Breakover voltage* VBO C=22nF MAX. 45 V Breakover voltage symmetry |VBO1-VBO2| C=22nF MAX. ±3 V Dynamic breakover voltage* △V VBO and VF at 10mA MIN. 5 V Output voltage* VO see diagram 2(R=20Ω) MIN. 5 V Breakover current* IBO C=22nF** MAX. 50 μ A Rise time* tr see diagram 3 MAX. 2 μ s Leakage current* IR VR=0.5VBO max MAX. 10 μ A *Applicable to both forward and reverse directions. **Connected in parallel to the device. 0.079(2.0) MAX 0.020(0.52) TYP 0.165 (4.2) MAX 1.0 2(26.0) MIN. 1.0 2(26.0) MIN.
RATINGS AND CHARACTERISTIC CURVES Diagram 2. Test circuit Diagram 1. Voltage – current characteristic curve Diagram 3. Rise time measurement