DB3 TSC | Alldatasheet

Document overview

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Technical content

Features

Unit (mm) Unit (inch) —Designed for through-Hole Device Type Mounting. 20μsec stability and protection against junction contamination. Maximum Ratings and Electrical Characteristics Mechanical Data —Terminal: Pure tin plated, lead free., solderable per MIL-STD-202, Method 208 guaranteed A Value 150 B Dimensions Junction and Storage Temperature Range -40 to + 125 D IFRM Part No. DB3 RI DB3TG RI 400Thermal Resistance (Junction to Ambient) (Note 1) Rating at 25°C ambient temperature unless otherwise specified. Units P DPower Dissipation Symbol —Weight : 0.1255 gram (approximately) Repetitive Peak Forward Current Pulse Width= °C/WRθJA °CTJ, TSTG DO-35 Axial Lead

Ordering Information

C —Marking : DB3/DB3TG —High temperature soldering guaranteed: 260°C/10s —High reliability glass passivation insuring parameter —Pb free version and RoHS compliant A B C D Version : D10

150mW Bi-directional Trigger Diode Small Signal Diode

Electrical Characteristics

Min. Typ. Max. Break-over Voltage Symmetry C= 22nF + / -V BO Max. Break-over Current C= 22nF IBO Max. Dynamic Breakover Voltage IBO to IF=10mA ΔV Min. VB= IB Max. Output Voltage V O Min. Tape & Reel specification μA100 Symbol V Units + / - 2 28 30 Item Symbol Dimension(mm) Leakage Current 10 μA *see diagram 1 Overall width A 64+1.69/-0.69 Tape spacing B 52.0+/-0.69 Component Pitch C 5.08+/-0.40 Untaped lead L1-L2 +/-0.69 Bent K 1.2 Max Tape Mismatch E 0.55(MAX) Glass offset F 0.69(MAX) Taped lead G 3.2Min lead beyond tape H 0 Reel outside diameter D 260+/-3 Type Number 0.5VBO (MAX) DB3TGDB3 + / - 3 Break-over Voltage Reel width W1 72+3/-1 Reel inner diameter D1 48+/-1 Feed hole width D2 20+/-0.5 59 V C= 22nF V BO V32 32 E F G H B A C K D1D2D Version : D10

150mW Bi-directional Trigger Diode Small Signal Diode Rating and Characteristic Curves VBO :Break-Over Voltage IBO : Break-Over Current ΔV : Dynamic Breakover Voltage IB : Leakage Current at VB=0.5*VBO VF : Voltage at Current IF=10mA 0.1 100 1 10 100 tp (μs) Repetitive peak pulse current (A) FIG 3 Repetitive peak pulse current versus pulse duration (maximum values) 1.00 1.01 1.02 1.03 1.04 1.05 1.06 1.07 1.08 25 50 75 100 125 VBO [Tj] / VBO [Tj=25°C] FIG 2 Relative variation of VBO versus junction temperature (typical values) Tj(°C) Diagram 1: Test Circuit ΔV VBO VB=0.5*VBO VF IF=10m IBO IB Ambient Tempeatature (oC) FIG 1 Admissible Power Dissipation Curve 120 160 0 1 02 03 04 05 06 07 08 09 0 1 0 0 1 1 0 1 2 0 1 3 0 Power Dissipation (mW) V I Version : D10