DB3M BILIN | Alldatasheet

Document overview

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Technical content

3.4 +0.3 -0.1 0.4±0.1 φ1 .5±0.1 Cathode indification

FEATURES

Power dissipation on printed TA=50oC Pc mW Repetitive peak on-state tp=20 S current f=120Hz ITRM A Operating junction temperature T J oC Storage temperature T STG oC Min 28 35 Typ 32 40 Max 36 45 Output voltage (NOTE 1) Vo Min V Breakover current (NOTE 1) IBO Max A Rise time (NOTE 1) tr Typ S Leakage current (NOTE 1) IR Max A 2. Connected in parallel w ith the devices NOTE: 1. Electrical characteristics applicable in both forw ard and reverse dirctions. 5.0 5.0 100.0 1.5 VR=0.5 VBO See FIG.1 10.0 C=22nf(NOTE 2) Breakover voltage (NOTE 1) Breakover voltage symmetry Dynamic breakover voltage (NOTE 1) VBO UNITS 150.0 I+VBO I- I-VBOI VI C=22nf(NOTE 2) See FIG.1 I=(IBO to IF=10mA) See FIG.1 V V±3.0 V Parameters Symbols UNITSDB3M,DB4M DB3M.DB4M VOLTAGE RANGE: 28-45 VSILICON BIDIRECTIONAL DIACS MINI-MELF The three layer,two termnal,hermetically sealed diacs are designed specifically for triggering thyristors. They demonstrate low break over current at break over voltage as they withstand peak pulse current, The breakover symmetry is within three volts(DB6). These diacs are intended for use in thyrisitors phase control,circuits for lamp dimming,universal motor speed control,and heat control. GALAXY ELECTRICAL Parameters See FIG.3 2.0 -40--- +125 C=22nf(NOTE 2) See FIG.1

ELECTRICAL CHARACTERISTICS

-40--- +125 DB3M DB4M See FIG.2 Max Min www.galaxycn.com BLGALAXY ELECTRICAL BL Document Number 0283006 1. Dimensions in millimeters

1.04 1.00 1.02 1.06 1.08 10075 125 VBO(TJ) VBO(TJ=25 TJ( BLGALAXY ELECTRICALDocument Number 0283006 2. 10KΩ 500KΩ D.U.T 220V 60Hz 0.1µ F Vo R=20Ω 90% 10% IP tr f=100Hz TJ initial=25℃ ITRM(A) 10 100 100001000 0.01 0.1 tp(µ s) www.galaxycn.com FIG.6--PEAK PULSEE CURRENT VERENT VERSUS PULSE DURATION(MAXIMUM VALUES) RATINGS AND CHARACTERISTIC CURVES DB3M.DB4M FIG.1--VOLTAGE-CURRENT CHARACTERISTIC CURVE FIG.2--TEST CIRCUIT FOR OUTPUT VOLTAGE FIG.3-- TEST CIRCUIT SEE FIG.2 ADJUST R FOR IP=0.5A FIG.4--POWER DISSIPATION VERSUS AMBIENT TEMPERATURE (MAXIMUM VALUES) FIG.5--RELATIVE VARIATION OF VBO VERSUS JUNCTION TEMPERATURE(TYPICAL VALUES) +IF -IF -V +V 10mA IBO IB 0.5VBO V VBO 0 10 20 30 40 50 60 70 80 90 100 110 120 130 100 120 140 160 P(mW) Tamb( ℃ )