DB3M DSK | Alldatasheet
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Technical content
3.4 +0.3 -0.1 0.4±0.1 φ1 .5±0.1 Cathode indification
FEATURES
Power dissipation on printed T A =50 o C Pc mW Repetitive peak on-state tp=20 S current f=120Hz I TRM A Operating junction temperature T J o C Storage temperature T STG o C Min 28 35 Typ 32 40 Max 36 45 Output voltage (NOTE 1) V o Min V Breakover current (NOTE 1) I BO Max A Rise time (NOTE 1) t r Typ S Leakage current (NOTE 1) I R Max A 2. Connected in parallel w ith the devices NOTE: 1. Electrical characteristics applicable in both forw ard and reverse dirctions. 5.0 5.0 100.0 1.5 V R =0.5 V BO See FIG.1 10.0 C=22nf (NOTE 2) Breakover voltage (NOTE 1) Breakover voltage symmetry Dynamic breakover voltage (NOTE 1) V BO UNITS 150.0 I+V BO I-V BO I VI C=22nf (NOTE 2) See FIG.1 I=(I BO to I F =10mA) See FIG.1 V V±3.0 V Parameters Symbols UNITSDB3M,DB4M DB3M.DB4M VOLTAGE RANGE: 28-45 V SILICON BIDIRECTIONAL DIACS MINI-MELF The three layer,two termnal,hermetically sealed diacs are designed specifically for triggering thyristors. They demonstrate low break over current at break over voltage as they withstand peak pulse current, The breakover symmetry is within three volts(DB6). These diacs are intended for use in thyrisitors phase control,circuits for lamp dimming,universal motor speed control,and heat control. Parameters See FIG.3 2.0 -40--- +125 C=22nf (NOTE 2) See FIG.1
ELECTRICAL CHARACTERISTICS
-40--- +125 DB3M DB4M See FIG.2 Max Min Dimensions in millimeters www.diode.kr Diode Semiconductor Korea
1.04 1.00 1.02 1.06 1.08 10075 125 VBO(T J VBO(T J =25 T J 10KΩ 500KΩ D.U.T 220V 60Hz 0.1µ F V o R=20Ω 90% 10% I P tr f=100Hz T J initial=25℃ I TRM (A) 10 100 100001000 0.01 0.1 tp(µ s) FIG.6--PEAK PULSEE CURRENT VERENT VERSUS PULSE DURATION(MAXIMUM VALUES) DB3M.DB4M FIG.1--VOLTAGE-CURRENT CHARACTERISTIC CURVE FIG.2--TEST CIRCUIT FOR OUTPUT VOLTAGE FIG.3-- TEST CIRCUIT SEE FIG.2 ADJUST R FOR IP=0.5A FIG.4--POWER DISSIPATION VERSUS AMBIENT TEMPERATURE (MAXIMUM VALUES) FIG.5--RELATIVE VARIATION OF VBO VERSUS JUNCTION TEMPERATURE(TYPICAL VALUES) F F -V +V 10mA I BO I B 0.5V BO V V BO 10 20 30 40 50 60 70 80 90 100 110 120 130 100 120 140 160 P(mW) Tamb( ℃ ) www.diode.kr Diode Semiconductor Korea