DB302S YFWDIODE | Alldatasheet
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208202, DB302S THRU DB307S DB-S 1 / 3 www.yfwdiode.com Dongguan YFW Electronics Co, Ltd. 3.0A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Reverse Voltage - 100 to 1000 V Forward Current – 3.0A
FEATURES
Glass Passivated Chip Junction Low power loss, high efficiency Lead free in comply with EU RoHS 2011/65/EU directives MECHANICAL DATA Case: DB-S Terminals: Solderable per MIL -STD- Method Approx. Weight: 0.4g / 0.02oz 1.Input pin(-) 2.Input pin(+) 3.Output Anode(~) 4.Output Cathode(~) DB-S Maximum Ratings and Electrical characteristics Ratings at 25 °C ambient temperature unless otherwise specified. Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %. Parameter Symbols DB302S DB303S DB304S DB305S DB306S DB307S Units Maximum Repetitive Peak Reverse Voltage VRRM 100 200 400 600 800 1000 V Maximum RMS voltage VRMS 70 140 280 420 560 700 V Maximum DC Blocking Voltage VDC 100 200 400 600 800 1000 V Average Rectified Output Current I(AV) 3 A Peak Forward Surge Current 8.3 ms Single Half Sine-Wave Superimposed on Rated Load(JEDEC method) IFSM 80 A Forward Voltage per element @IF =3.0A and 25°C VF 1.15 V Maximum DC Reverse Current at Rated DC Blocking Voltage @TA=25°C IR μA @TA=125°C 500 Typical Junction Capacitance （Note1） C j 35 pF Typical Thermal Resistance （Note2） RθJA/ RθJC 32/13 ° C/W Operating and Storage Temperature Range Tj, Tstg -55 ~ +150 °C （1）Measured at 1 MHz and applied reverse voltage of 4 V D.C
2 / 3 www.yfwdiode.com Dongguan YFW Electronics Co, Ltd. 10 1001 1.0 2.0 3.0 4.0 0.0 25 50 75 100 125 150 175 Fig.1 Derating Curve Average Rectified Output Current Average Rectified Output Current (A) Fig.5 Maximum Non-Repetitive Peak Forward Surage Current Peak A)Forward Surage Current ( Number of Cycles 8.3 ms Single Half Sine Wave (JEDEC Method) Fig.2 Typical Reverse Characteristics 0.1 1.0 100 20 40 60 80 100 12000 140 percent of Rated Peak Voltage (%)Reverse Instaneous Current（ A）Reverse μ T =125J °C T =25J °C Fig.4 Typical Junction Capacitance Junction Capacitance ( pF) 1.0 10 1000.1 100 Reverse Voltage (V) T =25J °C Fig.3 Typical Instaneous Forward Characteristics Instaneous Forward Current (A) 0.0 0.01 0.1 1.0 Instaneous Forward Voltage (V) T =25J °C pulse with 300μs 1% duty cycle Case Temperature (°C) 5.0 Resistive or Inductive Load
3 / 3 www.yfwdiode.com Dongguan YFW Electronics Co, Ltd. DB-S 1500DB-S Tape/Reel,13”reel Package Outline Plastic surface mounted package; leads Summary of Packing Options Package Packing Description Packing Quantity Industry Standard EIA-481-1