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C ! Ter minals: Plated Leads Solderable per MIL-STD-202, Method 208 ! Polarity: Cathode Band ! Weight: 0.35 grams (approx.) ! Mounting Position: Any ! Marking: Type Number Maximum R a tings and Electrical Characteristics @T A DO-41 Dim M in Max A 25.4 — B 4.06 5. C 0.70 0. D 2.00 2. All Di mensions in mm DB3 SILICON BIDIRECTIONAL DIACS D ABSOLUTE RATINGS Power Dissipation on Printed Cir cuit(L=10mm) TA=50℃ RepetitivePeak on-state Tp=10uS Current f=100HZ Storage a nd Operating Juntion Temperature ℃ DB3 Min 28 Typ 32 Max 36 Output Voltage* Min V BreakoverCurrent* Max uA Rise Time* Typ uS uAIB=0.5 VBO MAX See FIG 3 See FIG 3 LeakageCurrent* VMinDynamic Breakover Voltage See FIG 1 51 △V1 Breakover Voltage* C=22nf See Diagram 1 VBreakover VoltageSymmetry See Diagram 1 C=22nf VVBO 1+VBOI- 1-VBOI UNITS A mW
ELECTRICAL CHARACTERISTICS
PAPRAMETERS TEST CONDITIONS 150 2.0 -40 to +125 VALUE PARAMETERS DB3 VALUE UNITSSYMBOL Pc ITRM TSTG/TJ SYMBOLS See FIG 2VO △I=(IBO to IF=10mA) Max 1.5 MaxIB tr 100C=22nf**IBO NOTE:* Electrical characteristics applicablein both forward and reversedirections. ** Connectedin parallelwith the devices. VBO:28-36V DO-35 Dim M in Max A 27.5 — B C 0.50 0. D All Di mensions in mm — 2.0 ! Lead Free: For RoHS / Lead Free Version Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com Alldatasheet
FIG.2-TEST CIRCUIT FOR OUTPUT VOLATGE VO 220V 60HZ 10KΩ 500KΩ D.U.T R=20Ω 0.1uF tr FIG.3-TEST CIRCUIT SEE FIG.2 ADJUST R FOR Ip=0.5A 10% 90% IP FIG.4-TEST CIRCUIT FOR OUTPUT VOLATGE P(mW) 160 140 120 100 0 30 50 70 80 906020 10 40 130100 110 120 Tamb(°C) FIG.5-RELATIVE VARIATION OF VBO VERSUS JUNCTION TEMPERATURE(TYPICAL VALUES) VBO(IJ) VBO(TJ=25℃） 25 50 75 100 125 .00 .02 1.04 1.08 .06 TJ = (°C) FIG.6-PEAK PULSE CURRENT VERSUS PULSE DURATION (MAXIMUM VALUES) f = 100Hz Tjinitial=25°C tp(us) 10 100 1000 10000 0.01 0.1 ITRM(A) FIG.1-CURRENT-VOLTAGE CHARACTERISTICS -IF +IF -V +V 10mA IB VBO IB 0.5VBO Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com Alldatasheet