DB3 YANGJIE | Alldatasheet
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Technical content
5 Si DB3, DB4, DB6
DO-35(GLASS:
FEATURES
‘© Three way layer, two terminal,axial lead, —_F hermetically sealed diacs are designed specifically | {or triggering thyrisitors. They demonstrate low 41.02428.0) breakover current at breakover voltage as they MIN withstand peak pulse current. The breakover oe 0) ‘symmetry is within three volts (OB3, DB4) or four Ly ke volts (DB6). These diacs are intended for use in y—Fesa2) thyrisitors phase control, circuits for lamp dimming, MAX universal motor speed control,and heat control. ‘* This diocle is also avaiable in the DO-35 case 1.02(26.0) MIN 020(.52) TYP Dimensions in inches and (millimeters) ABSOLUTE RATINGS syMBOL PARAMETER os Power Dissipation on Printed , Po mw Circuit (L=10mm) Ta=50°C 150 Repetitive Peak on-state {p= 10 uS en foe [rw | zo | Storage and Operating Junction Temperature -40 to +125 /-40 to +110 ‘c
ELECTRICAL CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS UNITS in| 28 | 35 | 56 | Breakover Voltage * Veo C=22nf tye | 32} 40] 60) Vv See Diggram 1 ax FVeor Dan ‘See FIG1 [srstowcurea mo | ennai | mee [| | . 18 =0.5 Veo max NOTE: * Electrical characteristics applicable in both forward and reverse directions. “Connected in parallel with the devices.
RATING AND CHARACTERISTIC CURVES hd DB3,DB4,DB6 TI, FIG.1- CURRENT.VOLTAGE CHARACTERISTICS sir F62-TEST CIRCUIT FOR OUTPUT VOLTAGE toma || 10K0 Fo0Ko Dut leo 1 oS cone vo] || r:200 iB Zz i ose v 'osveo 1 Ww eet 5 wv ' 1 eo a FiG2-TEST CIRCUIT FOR OUTPUT VOLTAGE FIG-TEST CIRCUIT SEE GIF2 ADJUSTR ‘co — FOR IPOS a cor i ee PP eA EE l a l oo TEE EEN l oft tT TAT | vol | fomeof TTT TT ENT 10% I oLlLT TTT TT Tt TiN) | 0 10 20 30 40 50 60 70 80 90 100 110 120 130 mo] FIG 5- RELATIVE VARIATION OF VBO VERSUS SUNCTION TEMPERATURECTYPICAL VALUES) 166 PEAK PULSE CURRENT VERSUS PULSE 8014) DURATIONIMAXIMUM VALUES) Weare) sud tos EEE FREER EEE EEE 7 SSO ee,
408 EEE et 1 Sere enue ee
EERE et COERCED T= a y oo |
1.04 FREESE reco) EH ECAP SS
Bee Eee eee o.o1 COTTE TTT