DB3 SSE | Alldatasheet

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Technical content

SHANGHAI SUNRISE ELECTRONICS CO., LTD.

FEATURES

  • VBO: 26 ~ 36V version
  • Low breakover current
  • High temperature soldering guaranteed: 250 oC/10S/9.5mm lead length at 5 lbs tension MECHANICAL DATA
  • Terminal: Plated axial leads solderable per MIL-STD 202E, method 208C
  • Case: Glass,hermetically sealed
  • Mounting position: Any MAXIMUM RATINGS AND CHARACTERISTICS (Rating at 25oC ambient temperature unless otherwise specified) Min. Typ. Max. Breakover Voltage * C=22nF 26 32 36 V Breakover Voltage Symmetry C=22nF -3 3 V Dynamic Breakover Voltage * (Note 1) 5 V Output Voltage * 5 V Breakover Current * C=22nF ** 100 µA Rise Time * 1.5 µS Leakage Current * VR=0.5VBO 10 µA Power Dissipation on Printed Circuit Ta=65oC 150 mW Repetitive Peak on-state Current tp=20µS f=100Hz 2A Thermal Junction to Ambient 400 Resistances Junction to Lead 150 Operating Junction and Storage Temperature Range * : Electrical characteristic applicable in forward and reverse directions. ** : Connected in parallel with the devices. Note: 1. IF from IBO to 10mA. http://www.sse-diode.com DB3 BIDIRECTIONAL TRIGGER DIODE BREAKOVER VOLTAGE: 32V POWER: 150mW RATINGS TEST CONDITION SYMBOL VALUE UNITS VBO |+ VBO|-|-VBO| |∆V ± | VO IBO tr IB Pd ITRM Rθ(ja) oC/WRθ(jl) TJ,TSTG -40 125 oC TECHNICAL SPECIFICATION DO - 35 Dimensions in inches and (millimeters) 1.0 (25.4) MIN. .018 (0.46) .022 (0.56) .120 (3.0) .200 (5.1) 1.0 (25.4) MIN. DIA. .060 (1.5) .090 (2.3) DIA.