DB3_07 DIOTEC | Alldatasheet
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DB3 ... DB4 DB3 ... DB4 Bidirectional Si-Trigger-Diodes (DIAC) Bidirektionale Si-Triggerdioden (DIAC) Version 2006-04-27 Dimensions - Maße [mm] Breakover voltage Durchbruchspannung 28 ... 45 V Peak pulse current Max. Triggerimpuls ± 2 A Glass case Glas-Gehäuse DO-35 SOD-27 Weight approx. Gewicht ca. 0.13 g Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack Maximum ratings Grenzwerte Power dissipation Verlustleistung TA = 50°C P tot 150 mW 1) Peak pulse current (120 Hz pulse repetition rate) Max. Triggerstrom (120 Hz Puls-Wiederholrate) tp ≤ 10 µs I PM ± 2 A 1) Operating Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -50...+100°C -50...+175°C Characteristics Kennwerte Breakover voltage Durchbruchspannung dV/dt = 10 V/µs DB3 DB4 VBO VBO 28 ... 36 V 35 ... 45 V Breakover current – Durchbruchstrom V = 98% V BO IBO < 200 µA Asymmetry of breakover voltage Unsymmetrie der Durchbruchspannung |V(BO)F – V(BO)R| ΔVBO < 3.8 V Foldback voltage – Spannungs-Rücksprung ΔI = IBO to/auf IF = 10 mA dV/dt = 10 V/µs ΔVF/R > 5 V Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft RthA < 300 K/W 1)
1 Valid, if leads are kept at ambient temp erature at a distance of 10 mm from case
Gültig, wenn die Anschlussdrähte in 10 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden © Diotec Semiconductor AG http://www.diotec.com/ 1 Ø 1.9 62.5 3.9 Ø 0.52 Type
DB3 ... DB4 2 http://www.diotec.com/ © Diotec Semiconductor AG