DB3-DB4 TGS | Alldatasheet
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TIGER ELECTRONIC CO.,LTD
1.04 1.00 1.02 1.06 1.08 10075 125 VBO(TJ) VBO(TJ=25 TJ( 10KΩ 500KΩ D.U.T 220V 60Hz 0.1µ F Vo R=20Ω 90% 10% IP tr f=100Hz TJ initial=25℃ ITRM(A) 10 100 100001000 0.01 0.1 tp(µ s) FIG.6--PEAK PULSEE CURRENT VERENT VERSUS PULSE DURATION(MAXIMUM VALUES) FIG.1--VOLTAGE-CURRENT CHARACTERISTIC CURVE FIG.2--TEST CIRCUIT FOR OUTPUT VOLTAGE FIG.3-- TEST CIRCUIT SEE FIG.2 ADJUST R FOR IP=0.5A FIG.4--POWER DISSIPATION VERSUS AMBIENT TEMPERATURE (MAXIMUM VALUES) FIG.5--RELATIVE VARIATION OF VBO VERSUS JUNCTION TEMPERATURE(TYPICAL VALUES) +IF -IF -V +V 10mA IBO IB 0.5VBO V VBO 0 10 20 30 40 50 60 70 80 90 100 110 120 130 100 120 140 160 P(mW) Tamb( ℃ ) DB3/DB4 Silicon Bidirectional Diacs Ratings and Characteristic Curves