DB105A JINANJINGHENG | Alldatasheet
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R SEMICONDUCTOR SIDAC Bilateral Voltage triggered Swit h Breakover Voltage:95-330Volts c JINAN JINGHENG ELECTRONICS CO., LTD. HTTP WWW.JINGHENGGROUP.COM://51- SMA(DO-214AC) 0.065(1.65) 0.090(2.29) 0.181(4.60) 0.208(5.28) 0.060(1.52) 0.012(0.305) 0.008(0.203) MAX 0.110(2.79) 0.049(1.25) 0.078(1.98) 0.157(3.99) 0.189(4.80) 0.030(0.76) 0.006(0.152) 0.100(2.54) Mini MELF(DO-213AA)- 0.144(3.65) 0.136(3.45) SOLDERABLE ENDS 1st BAND 0.067(1.7) 0.059(1.5) 0.018(0.45) 0.010(0.25)SOD-123FL 0.039(1.00 ) 0.020(0.50) 0.077(1.95 ) 0.054(1.38) 0.114(2.90 ) 0.098(2.50) 0.154(3.90) 0.138(3.50) 0.010(0.25) MAX 0.052(1.33) 0.031(0.8) 0.010(0.25) MIN R-1 0.140(3.5) 0.102(2.6) 0.025(0.65) 1.0(25.4) MIN. 0.116(2.9) 0.091(2.3) DIA. 0.0 (0.5 ) DIA. 21 5 1.0(25.4) MIN. DO-41 Inches (millimeters) 0.205(5.20) 0.107(2.7) 0.034(0.85) 1.0(25.4) MIN 1.0(25.4) MIN 0.161(4.10) 0.080(2.0) DIA. 0.026(0.65) DIA.
R=100 OHMS Peak On-state Voltage I =1Amp T Peak One Cycle Surge Current 50/60Hz Sine Wave (Non-Repetitive) Switching Resistance Rs = (V -V )BO S (I ) BOS-I 50/60Hz Sine Wave Critical Rate-of-rise Of Off-state Voltage at Rate V T 100 C DRM j ≦ Critical Rate-of-Rise Of On-State Current mAmps Amps Volts MAX 60Hz 50Hz Volts/ second Amps/ second TYPMAXTYP MINMIN IH VTM ITSM RS d/ dvt d/ dit 100 100 100 100 100 100 100 100 100 100 100 20. 20. 20. 20. 20. 20. 20. 20. 20. 20. 16.7 16.7 16.7 16.7 16.7 16.7 16.7 16.7 16.7 16.7 16.7 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 1500 1500 1500 1500 1500 1500 1500 1500 1500 1500 1500 150 150 150 150 150 150 150 150 150 150 150 KΩ Electrical Specifications PART NUMBER IT(RMS) VDRM VBO IDRM IBO DB105R DB110R DB120R DB130R DB140R DB150R DB200R DB220R DB250R DB240R On-state RMS Current Tj 110 C 50/60Hz Repetitive Peak Off-state Voltage Breakover voltage 50/60Hz sine wave Repetitive Peak Off-state Current 50/60hz Sine Wave V=V DRM Breakover Current 50/60Hz sine wave Volts Volts Amps Amps MIN MAXMAX MAXMAX MIN 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 ±90 ±90 ±90 ±90 ±90 ±90 ±180 ±190 ±190 ±180 ±190 205 104 110 190 140 130 120 270 240 220 230 118 125 215 170 146 138 113 330 280 250 SMA DB105S DB110S DB120S DB130S DB140S DB150S DB200S DB220S DB250S DB240S 1.0 1.0DB300R DB300S R SEMICONDUCTOR DB105A DB110A DB120A DB130A DB140A DB150A DB200A DB220A DB250A DB240A DB300A Amps 20. DO-41 JINAN JINGHENG ELECTRONICS CO., LTD. HTTP WWW.JINGHENGGROUP.COM://5-2 R1- DB105K DB110K DB120K DB130K DB140K DB150K DB200K DB220K DB250K DB240K DB300K LL105 LL110 LL120 LL130 LL140 LL150 LL200 LL220 LL250 LL240 LL300 SOD 123FL - Mini MELF
RS= VBOVT VSVDRM IH IS IBO IDRM (B O -S ) (S -B O ) VV II V-I Characteristics FIG.1 Normalized DC Holding Current vs case/Lead Temperature Case T emperature(T ) CC Ratio of IH I (Tc=25 C)H Surge Current Duration- Full Cycles FIG.2 Peak surge current vs surge current duration Peak surge (Non-repetitive)on-state current (I )-Amps TSM 1.0 1.0 2.0 4.0 6.0 8.0 100 10 100 1000 SUPPLY FREQUENCY: 60Hz Sinusoidal LOAD: Resistive RMS ON-STATE CURRENT: IT RMS Maximum Rated value at Special junction temperature BLOCKING CAPABILITY MAY BE LOST DURING AND IMMEDIATELY FOLLOWING SURGE CURRENT IMTERVAL OVERLOAD MAY NOT BE REPEATED UNTIL JUNCTION TEMPERATURE HAS RETURNED TO STEADY-STATE RATED VALUE R SEMICONDUCTOR JINAN JINGHENG ELECTRONICS CO., LTD. HTTP WWW.JINGHENGGROUP.COM://5-3 FIG.3 Normalized Repetitive Peak Breakover Current vs Junction Temperature Junction Temperature (T )- CJ Repetitive Peak Breakover Current (I ) MultiplierBO V=VBO 20 30 50 70 90 11040 60 80 100 120 Junction T emperature(T ) CJ Percentage of V Changes-% BO FIG.5 Normalized C Changes vs Case Temperature BO -12 -40 +40 +60 +80 +100 +120-20 +25 +200 -10 FIG.4 Repetitive Peak On-State Current (I ) vs Pulse Width at Various Frequencies TRM Non-Repeated f=10Hz f=1kHz f=5kHz f=10kHz f=20kHz f=100Hz Repetition Frequency f=5Hzto vt ITRM di/dt Limit Line Pulse base width (to)-mSec. Repetitive Peak On-State Current (I )-Amps TRM T =110 C MaxJ VBO Firing Current wavetorm 0.6 0.8 200 400 600 100 4466 688 8 1 22 2X10-3 1X10-2 1X10-1
FIG.6 Ignitor Circuit (Low Voltage Input)
4.7 F/c109
4.7K/c87 200V SIDAC H.V. IGNITOR 1.2 F/c1094.7 F 100V /c109
10 F/c109
FIG.7 Typical High Pressure Sodium Lamp Firing Circuit SIDAC SIDAC LAMP LAMP 16mH 120VAC 60Hz 120VAC 220VAC 220VAC 50Hz 3.3K/c87 7.5K/c87 BALLAST BALLAST 0.47 F 400V /c109 0.22 F/c109 FIG.10 Dynamic Holding Current Test Circuit for SIDAC FIG.8 Comparison of SIDAC vs SCR FIG.11 Basic SIDAC Circuit FIG.9 Xenon Lamp Flashing Circuit SIDAC VBO LOAD VBO VBO 125-145 IH IH IH SCOPE IH Ipk PUSH TO TEST TRACE STOPES LOAD CURRENT CONDUCTION ANGLE DEVICE UNDER TEST SWITCH TO TEST IN EACH DIRECTIONS SIDAC XENON LAMP 100-250 VAC 60Hz 100-250 VAC 60Hz 100-250 VAC 60Hz 100-250 VAC 60Hz 120VAC 60Hz 100 100 1% 20M250V 4KV 10 F 10 F 250V 0.1 F 400V VBOVBO R SEMICONDUCTOR JINAN JINGHENG ELECTRONICS CO., LTD. HTTP WWW.JINGHENGGROUP.COM://54-
FIG.12 Relaxation Oscillator Using a SIDAC (a) Circuit SIDAC R RL VBO (b) Waveforms VC IL t t IL VC C Rmax RminV- V I IN BO BO V- V I IN TM H(MIN) VVDC(IN) BO INPUT (See Note B) R =150BB1 /c87 R =0.1S /c87 R =100BB2 /c87 V= 0BB2 V =10VBB1 V =20VCC V MONITORCE I MONITORC TIP-47 100mH 0.63A SIDAC V BO COLLECTOR VOLTAGE VOLTAGE AND CURRENT WAVEFORMS NOTE A NOTE B : Input pulse width is increased until I =0.63A. : Sidac (or Diac or series of diacs) chosen so that V is just below V rating of transistor to be protected. The Sidac (or Diac) eliminates a reverse breakdo wn of the transistor in inductive switching circuits where otherwise the transistor could be destroyed. CM BO CEO TEST CIRCUIT INPUT VOLTAGE T =3ms (See Note A) W TW 100mSCOLLECTOR CURRENT VCE(sat) 10V 50/c87 50/c87 2N6127 (or equivalent) FIG.13 SIDAC Added To Protect Transistor For Typical Transistor Inductive Load Switching Requirements R SEMICONDUCTOR JINAN JINGHENG ELECTRONICS CO., LTD. HTTP WWW.JINGHENGGROUP.COM://55-