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/circle6 G la s s P a s s i v a t e d D i e C o n s t r u c t i o n G /circle6 L o w F o r w a r d V o l t a g e D r o p /circle6 High Current Capability /circle6 H i g h S u r g e C u r r e n t C a p a b i l i t y /circle6 Designed for Surface Mount Application B ~ ~ A D E /circle6 P l a s t i c M a t e r i a l – U L R e c o g n i t i o n F l a m m a b i l i t y C l a s s i f i c a t i o n 9 4 V - O C L H M e ch a n i c a l D a t a J /circle6 /circle6 Ter minals: Plated Leads Solderable per MIL-STD-202, Method 208 K /circle6 P o l a r i t y : A s M a r k e d o n C a s e /circle6 /circle6 Mounting Position: Any /circle6 Marking: Type Number Maximum Rat ings and Electrical Characteristics @TA=25°C unles s otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol DB DB 202S DB 203S DB 204S DB 205S DB 206S DB

207 S Unit

Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 50 100 200 400 600 800 1000 V RMS Revers e Voltage VR(RMS) 35 70 140 280 420 560 700 V A verage Rec tified Output Current @T A = 40°C IO 2. 0 A Non-Repeti t ive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 60 A Forward V oltage per element @I F FM 1.1 V Pea k R e v e r s e C u r r e n t @ TA = 25°C A t Rated DC Blocking Voltage @T A = 125°C IRM 5.0 500 µA Ty pi cal Junction Capacitance per element (Note 1) C j 25 pF Ty pi cal Thermal Resistance per leg (Note 2) RθJA RθJL 15 °C/W Operating and Storage Temperature Range Tj, TSTG -65 to +150 °C Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C. 2. Mounted on PC board with 13mm 2 copper pad. DB-S Dim Mi n Max A B C 0.25 — D 0.08 0.33 E G 1.02 1.53 H 8.00 8.51 J K 5.00 5.20 L 0.90 1.20 All Di mensions in mm 1 of 2 DB201S - DB207S ! Lead Fr ee: For RoHS / Lead Free Version, www.senocn.com Z ibo Seno Electronic Engineering Co., Ltd. Alldatasheet

0.01 0.1 1.0 I , INST ANTANEOUS FORWARD CURRENT (A) F V , INSTANT ANEOUS FORWARD VOLTAGE (V) Fig. 2 Typ Forward Characteristics (per element) F T = 25°C Pulse Width = 300µs 2% duty cycle j 100 1 10 100 C , CAP ACITANCE (pF) J V , REVERSE VOL TAGE (V) Fig. 4 Typ Junction Capacitance (per element) R T = 25°c f =

1.0 Mhz

V = 50 mV p-p j sig 0.01 0.1 1.0 100 2004 0 6 0 80 100 120 140 I , INST ANTANEOUS REVERSE CURRENT (µA) R PERCENT OF RA TED PEAK REVERSE VOLTAGE (%) Fig. 5 Typ Reverse Characteristics (per element) T = 125 °Cj T = 25°Cj DB201S - DB207S DB201S – DB207 S 1.0 2.0 11 0 100 I , P EAK FORWARD SURGE CURRENT (A) FSM NUM BE R OF CYCLES AT 60 Hz Fig. 3 Max No n-Repetitive Peak Forward Surge Curr ent Singl e half-sine-Wave (JEDEC Method) 40 60 80 100 120 140 I , A VERAGE FORWARD CURRENT (A) (AV) T , AMBIENT T EMPERATURE (°C) Fig. 1 Output Current Derating Curve A

60 Hz Resistive or

1.5 www.senocn.com Z ibo Seno Electronic Engineering Co., Ltd. Alldatasheet