DB201 HDSEMI | Alldatasheet

Document overview

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Technical content

Features

o 2.0A

  • VRRM 50V-1000V
  • High surge current capability

Applications

Polarity: Color band denotes cathode Glass passivated chip ● DB20X H igh Diode Semiconductor DB Plastic-Encapsulate Bridge Rectifier General purpose 1 phase Bridge rectifier applications DB DB201 THRU DB207 DB2 Item Symbol Unit Conditions 01 02 03 04 05 06 07 Repetitive Peak Reverse Voltage V RRM V 50 100 200 400 600 800 1000 Average Rectified Output Current I O A 60Hz sine wave, R-load ,Ta=25℃ 2.0 Surge(Non- repetitive)Forward Current I FSM A 60H Z sine wave, 1 cycle, T j =25℃ Current Squared Time I t A S 1ms≤t<8.3ms Tj=25℃,Rating of per diode 15 Storage Temperature T stg -55 ~+150 Junction Temperature T j -55 ~+150

Electrical Characteristics

a =25℃ Unless otherwise specified) Item Symbol Unit Test Condition Max Peak Forward Voltage V FM V I FM =2.0A, Pulse measurement, Rating of per diode 1.1 Peak Reverse Current I RRM μA V RM RRM , Pulse measurement, Rating of per diode R θ J-A Between junction and ambient, On glass-epoxi substrate Thermal Resistance R θ J-L ℃/W Between junction and lead V 35 70 140 280 420 560 700 Maximum RMS V RMS Voltage

H igh Diode Semiconductor 02 0 4 0 6 08 0 1 0 0 0.01 0.1 1.0 100 Voltage(%) IR(uA) Tj=150 Tj=25 FIG4:Typical Reverse Characteristics 0.4 Io(A) Ta( FIG1:Io-Ta Curve 160 sine wave R-load free in air 40 80 120 0.8 1.2 1.6 2.0 2.4 IFSM(A) 2 5 10 20 50 100 sine wave non-repetitive Tj=25 FIG2:Surge Forward Current Capadility Number of Cycles 8.3ms 1cycle IFSM 8.3ms 0.01 0.02 0.05 VF(V) IF(A) FIG3: Forward Voltage 0.1 0.5 Ta=25

H igh Diode Semiconductor DB Dimensions in inches and (millimeters) .350(8.9) .300(7.6) .045(1.14) .035(0.89) .185(4.69) .150(3.81) .255(6.5) .245(6.2) .315(8.0) .285(7.24) .205(5.2) .195(5.0) .335(8.51) .320(8.13) .130(3.30) .120(3.05) .023(0.58) .018(0.46) .08(2.03) .05(1.27) .075(1.90) .055(1.39) .013(0.33) .0088(0.22)