DB101 JINGHENG | Alldatasheet
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Technical content
DB101(DF005) THRU DB107(DF10) R SEMICONDUCTOR
FEATURES
Case: DB molded plastic body Terminals: Plated leads solderable per MIL-STD-750,method 2026 AnyMounting Position: Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Glass passivated chip junction Rating to 1000V PRV Ideal for printed circuit board High temperature soldering guaranteed:260 C/10 seconds at terminals Component in accordance to RoHS 2011 65 EU MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Maximum Peak Reverse VoltageRecurrent VRRM Volts Volts Volts Volts PF Amp Amps VRMS VDC I(AV) IFSM TSTG VF IR CJ Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current Maximum Instantaneous Forward Voltage a t1 0AD C. Operating junction and storage temperature range Typical junction capacitance(Note1) Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC method) TJ Symbols Units Maximum DC Reverse Current at rated DC blocking voltage 1.0 1.1 500 Typical thermal resistence(Note 2) 40 -55 to +150 100 100 200 200 140 400 400 280 600 600 420 800 800 560 1000 1000 700 DB101 DB102 DB103 DB104 DB105 DB106 DB107 GLASS PASSIVATED BRIDGE RECTIFIER Reverse Voltage: 50 to 1000 Volts Forward Current: 1.0 Amps DF005 DF01 DF02 DF04 DF06 DF08 DF10 1.Measured at 1MH and applied reverse voltage of 4.0 Volts. ZNote: (Rating at 25 C ambient temperature unless otherwise specified. Single phase ,half wave , resistive or inductive load. For capacitive load,derate current by 20%.) ° 60H ,Z JINAN JINGHENG ELECTRONICS CO., LTD. HTTP WWW.JINGHENGGROUP.COM://21- Dimensions in inches and (millimeters) 0.256(6.5) 0.240(6.1) 0.358(9 10). 0.299(7.60) 0.346(8.80) 0.313(7 95). 0.134(3.40) 0.195(4.95) 0.193(4 9). 0.024(0.60) 0.016(0.40) DB 0.047(1 20). 0.035(0.89) 0.013(0 33). 0.006(0 15). 0.083(2 10). T =25 CA ° T =125 CA ° RθJA °C/W Aμ
RATINGS AND CHARACTERISTIC CURVES DB101(DF005) THRU DB107 (DF10) 0.01 0.1 100 200 40 60 80 100 120 140 15 5 0 10 100 0 25 50 75 100 125 150 175 0.2 0.4 0.6 1.0 0.8 FIG.1-TYPRCAL FORWARD CURRENT DERATING CURVE FIG.2-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT FIG4-TYPICAL FORWARD CHARACTERISTICS FIG.5-TYPICAL REVERSE CHARACTERISTICS AVERAGE FORWA RD CURREN T( A ) INSTANTANEOUS FORWA RD CURREN T( AMPERES) PEAK FORWARD SURGE CURRENT(AMPERES) INSTANTANEOUS FORWARD VOLTAGE (VOLTS)REVERSE VOLTAGE. (V) PERCENT OF RATED PEAK REVERSE VOLTAGE(%) NUMBER OF CYCLES AT 60Hz AMBIENT TEMPERATURE ( C)° 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) Tj=25 C° Tj=125 C° 14 10 100 100 FIG3-TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE(pF) T =25 CA ° INSTANTANEOUS REVERSE CURREN T( u A 0.01 0.1 T =25 CA ° Pulse Width=300 s 1% Duty Cycle μ JINAN JINGHENG ELECTRONICS CO., LTD. HTTP WWW.JINGHENGGROUP.COM://22-