DB101 DSK | Alldatasheet
Document overview
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Technical content
1± 0.1 6.3± 0.2 8.3± 0.3 8.3± 0.1 5± 0.2 2.5± 0.15 8.8± 0.5
FEATURES
Surge overload rating to 30 Amperes peak Ideal for printed circuit board Reliable low cost construction utilizing molded plastic technique results in inexpensive product 94V-O MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. DB103 DB104 DB105 DB106 DB107 UNITS Maximum recurrent peak reverse voltage V RRM 200 400 600 800 1000 V Max imum RMS v oltage V RMS 140 280 420 560 700 V Maximum DC blocking voltage V DC 200 400 600 800 1000 V Max imum av er age f orw ar d Output current @T A =25 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load Max imum ins tantaneous f or w ard v oltage at 1.0 A V F V Maximum reverse current @T A =25 μA at rated DC blocking voltage @T A =100 mA Operating junction temperature range T J Storage temperature range T STG DB101 DB102 50 100 1.1 1.0 30.0 I FSM DB101 --- DB107 A 10.0 Lead solderable per MIL-STD-202 method 208 I F(AV) 1.0 SILICON BRIDGE RECTIFIERS Glass passivated chip junctions A - 55 ---- + 150 - 55 ---- + 150 I R 100 VOLTAGE RANGE: 50 --- 1000 V CURRENT: 1.0 A DB - 1 Plastic material has UL flammability classification Polarity symbols molded on body Weight: 0.016 ounces,0.45 grams Dimensions in millimeters Diode Semiconductor Korea www.diode.kr
.01 1.0 0 40 60 0.1 100 120 14080 T J =25 100 0.1 1.0 0.1 T J =125 Pulse Width =300 u S 0.5 COPPERPADS (13mm x 13mm) 1.0 PCB 9.5mm Resislive or Inductive Load 0 25 50 75 100 125 150 1 10 100 8.3ms Single Half Sine Wave T J =25 PEAK FORWARD SURGE CURRENT, AMPERSE AVERAGE FORWARD OUTPUT CURRENT, AMPERSE PERCENT OF RATED PEAK REVERSE VOLTAGE,% FIG.1 -- PEAK FORWARD SURGE CURRENT FIG.2 -- FORWARD DERATING CURVE DB101 - - - DB107 NUMBER OF CYCLES AT 60H Z AMBIENT TEMPERATURE, INSTANTANEOUS REVERSE CURRENT, FIG.3 -- TYPICAL FORWARD CHARACTERISTIC FIG.4 -- TYPICAL REVERSE CHARACTERISTIC INSTANTANEOUS FORWARD CURRENT, AMPERSE MICRO AMPERSE INSTANTANEOUS FORWARD VOLTAGE, VOLTS www.diode.kr Diode Semiconductor Korea