DAZF075G120SCA DACO | Alldatasheet

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◆ Low switching loss ◆ Superfast diodes ◆ Fast switching field stop IGBT trench technology Preliminary Dimensions in inches and (millimeters) SOT-227 G = Gate, C = Collector, E = Emitter E C G E Feb 2023 Rev. 1.1 DIMENSIONS MMINCHES MIN MAX MIN MAX 0.460 0.307 0.030 0.071 1.488 1.248 0.917 0.996 0.579 0.492 0.161 0.161 0.181 0.165 1.181 -0.002 0.483 0.323 0.033 0.081 1.504 1.260 0.957 1.008 0.602 0.516 0.169 0.169 0.197 0.181 1.197 0.004 11.68 7.80 0.75 1.80 37.80 31.70 23.30 25.30 14.70 12.50 4.10 4.10 4.60 4.20 30.00 -0.05 12.28 8.20 0.85 2.05 38.20 32.00 24.30 25.60 15.30 13.10 4.30 4.30 5.00 4.60 30.40 0.10 M4*8 A B C D E F G H I J K L M N O Q R Symbol Rated Value Unit Collector-Emitter Voltage VCES 1200 V Gate-Emitter Voltage VGES ±20 V DC-Collector Current Tc＝80℃ IC,nom. 75 A Repetitive Peak Collector Current tp =1ms ICRM 150 A Total Power Dissipation Ptot 400 W Isolation Voltage (Terminal to Base, AC 1 min.) Between All Terminals and Baseplate Viso 2500 V DC Forward Current IF 75 A Repetitive Peak Forward Current tp =1ms IFRM 150 A Junction Temperature Range TJ －40～＋150 ℃ Storage Temperature Range Tstg －40～＋125 ℃ Weight 30.5 g N.mMounting Torque (M4 Screw) Item Md 1.3 1.1To terminals To heatsink

DACO SEMICONDUCTOR CO., LTD. www.dacosemi.com.tw - 2 - ■ Electrical Characteristics ■ Thermal Characteristics （TVJ＝25℃） Symbol Test Conditions Min. Typ. Max. Unit ICES VCEĢ1200V VGEĢ0V - 10 500 μA IGES VGEĢ20V VCEĢ0V - - 400 nA VCEčsat Ď ICĢ75A ,VGEĢ15V ̺ 1.9 2.2 V VGEčthĎ VCEĢVGE, ICĢ4mA 4.5 5.5 6.5 V Cies - 9.5 - nF Rise Time tr - 0.033 - Turn-On Time td,on - 0.080 - Fall Time tf - 0.096 - Turn-Off Time td,off - 0.252 - Symbol Test Conditions Min. Typ. Max. Unit IGBT - - 0.30 Diode - - 0.55 ℃/W VCCĢ600V ICĢ75A RGĢ1Ω VGEĢ±15V Characteristic Junction to CaseThermal Impedance Rthčj-c Ď Characteristic Collector-Emitter Cut-Off Current Gate-Emitter Leakage Current Collector-Emitter Saturation Voltage Gate-Emitter Threshold Voltage Switching Time μs Input Capacitance （TC＝25℃） Reverse Transfer Capacitance Cres VCEĢ25V, VGEĢ0V, fĢ1MHz - 0.14 - nF mJ mJ Ω 4.7 4.8 0.5Turn-on Energy Loss Per Pulse Turn-off Energy Loss Per Pulse External Gate Resistance Eon Eoff RG ICĢ75A , VCCĢ600V VGEĢ15V , RGĢ1Ω Inductive load VCEĢ25V, VGEĢ0V, fĢ1MHz Preliminary Data Output Capacitance Coes VCEĢ25V, VGEĢ0V, fĢ1MHz - 0.16 - nF Per Switch ■ Free Wheeling Diode Ratings & Characteristics Symbol Test Conditions Min. Typ. Max. Unit VF IFĢ75A, VGEĢ0V - 2.0 2.5 V Characteristic Peak Forward Voltage 2.9 -ErecReverse Recovery Energy -IF=75A, RGĢ1Ω VR= 600V, VGE= -15V 4.3 -QrRecovered Charge -IF=75A, RGĢ1Ω VR= 600V, VGE= -15V 62 -IRMPeak Reverse Recovery Current -IF=75A, RGĢ1Ω VR= 600V, VGE= -15V （TVJ＝25℃） mJ μc A ns-- 90Reverse Recovery Time Trr IF= 75A, RGĢ1Ω VR= 300V, VGE= -15V Internal Gate Resistance RG Ω4.7 DAZF075G120SCA Feb 2023 Rev. 1.1

DACO SEMICONDUCTOR CO., LTD. Typical Characteristics www.dacosemi.com.tw - 3 - Fig.1 Output characteristic (Typical) Fig.2 Transfer characteristic (Typical) Fig.3 Forward characteristic of inverse diode (typical) Fig.4 Switching losses (Typical) Fig.6 Transient thermal impedance Fig.7 Reverse bias safe operation area (RBSOA) Preliminary Data 0 10 20 30 40 50 60 70 80 0 3 6 9 12 15 18 21 24 1,0 Fig.5 Switching losses IGBT,Inverter (typical) DAZF075G120SCA Feb 2023 Rev. 1.1

www.dacosemi.com.tw - 4 - Disclaimer DACO Semiconductor reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. DACO Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does DACO Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Purchasers is responsible for its products and applications using DACO Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by DACO Semiconductor. “Typical” parameters which may be provided in DACO Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. DACO Semiconductor products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of DACO Semiconductor’s product can reasonably be expected to result in personal injury, death or severe property or environmental damage. DACO Semiconductor accept no liability for inclusion and/or use of DACO Semiconductor’s products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Purchasers buy or use DACO Semiconductor products for any such unintended or unauthorized application, Purchasers shall indemnify and hold DACO Semiconductor and its suppliers and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that DACO Semiconductor was negligent regarding the design or manufacture of the part. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of DACO Semiconductor Co., Ltd. DACO SEMICONDUCTOR CO.,LTD. DAZF075G120SCA Feb 2023 Rev. 1.1