DAP202UW GWSEMI | Alldatasheet
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Technical content
Solid dot = Green molding compound device, if none,the normal device. Maximum Ratings @Ta=25℃ Non-Repetitive Peak Reverse Voltage V RM 80 V DC Blocking Voltage V R 80 V Forward Continuous Current I FM 300 mA Average Rectified Output Current I O 100 mA Power Dissipation P D 200 mW Operation Junction and Storage Temperature Range TJ,TSTG -55~+150 Parameter Symbol Limit Unit Thermal resistance From Junction to ambient R θJA 625 ℃/W Forward Surge Current @t=8.3ms Non-Repetitive Peak I FSM 2.0 A ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Max Unit Reverse breakdown voltage V (BR) I R = 100 μ A 80 V Reverse voltage leakage current I R V R =70V 0.1 μA Forward voltage V F I F =100mA 1.2 V Diode capacitance C D V R =6V, f=1MHz 3.5 pF Reverse recovery time t rr V R =6V, I F =5mA 4 ns SWITCHING DIODE FEATURES: z Four types of packaging are available z High speed z Suitable for high packing density layout z High reliability MARKING:P SOT-323 P P Plastic-Encapsulate Diodes DAP202UW
0.1 100 02 0 4 0 6 0 8 0 100 1000 0 5 10 15 20 1.0 1.1 1.2 1.3 1.4 Forward Characteristics Reverse Characteristics Power Derating Curve POWER DISSIPATION P D (mW) AMBIENT TEMPERATURE T a ( ) Pulsed T a =100 T a =25 FORWARD CURRENT I F (mA) FORWARD VOLTAGE V F (V) T a =100 T a =25 REVERSE CURRENT I R (nA) REVERSE VOLTAGE V R (V) Pulsed T a =25 f=1MHz Capacitance Characteristics REVERSE VOLTAGE V R (V) CAPACITANCE BETWEEN TERMINALS C T (pF) DAP202UW
A 0.900 1.100 0.035 0.043 A1 0.000 0.100 0.000 0.004 A2 0.900 1.000 0.035 0.039 b 0.200 0.400 0.008 0.016 c 0.080 0.150 0.003 0.006 D 2.000 2.200 0.079 0.087 E 1.150 1.350 0.045 0.053 E1 2.150 2.450 0.085 0.096 e e1 1.200 1.400 0.047 0.055 L L1 0.260 0.460 0.010 0.018 θ 0° 8° 0° 8° 0.525 REF 0.021 REF Symbol Dimensions In Millimeters Dimensions In Inches 0.650 TYP 0.026 TYP DAP202UW Plastic surface mounted package; 3 leads SOT-323 PACKAGE OUTLINE