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FEATURES: z Four types of packaging are available z High speed. (trr=1.5ns Typ.) z Suitable for high packing density layout z High reliability. MARKING: P Maximum Ratings @T A=25 ℃ Parameter Symbol Limits Unit Peak reverse voltage VRM 80 V DC reverse voltage VR 80 V Maximum (peak) forward current IFM 300 mA Average forward current IO 100 mA Power dissipation PD 200 mW Junction temperature Tj 150 ℃ Storage temperature Tstg -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Reverse breakdown voltage V(BR) IR= 100μA 80 V Reverse voltage leakage current IR V R=70V 0.1 μA Forward voltage VF IF=100mA 1.2 V Diode capacitance CD V R=6V, f=1MHz 3.5 pF Reverse recovery time trr V R=6V, IF=5mA 4 ns SOT-323 z 2012-1 WILLAS ELECTRONIC CORP. SOT-323 Plastic-Encapsulate Diodes DAP202U z
2012-1 WILLAS ELECTRONIC CORP. SOT-323 Plastic-Encapsulate Diodes DAP202U
Dimensions in inches and (millimeters) SOT-323 Rev.D .056(1.40) .047(1.20) .096(2.45) .078(2.00) .004(0.10)MIN. .010(0.25) .003(0.08) .043(1.10) .032(0.80) .016(0.40) .008(0.20) .004(0.10)MAX. .087(2.20) .070(1.80) .054(1.35) .045(1.15) 2012-1 WILLAS ELECTRONIC CORP. SOT-323 Plastic-Encapsulate Diodes DAP202U