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FEATURES: z Four types of packaging are available z High speed z Suitable for high packing density layout z High reliability MARKING:N Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25 Parameter Symbol Limit Unit Peak reverse voltage VRM 80 V DC reverse voltage VR 80 V Maximum (peak) forward current IFM 300 mA Average forward current IO 100 mA Power dissipation PD 200 mW Junction temperature Tj 150 ℃ Storage temperature Tstg -55~+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Max Unit Reverse breakdown voltage V(BR) I R= 100μA 80 V Reverse voltage leakage current IR V R=70V 0.1 μA Forward voltage VF IF=100mA 1.2 V Diode capacitance CD V R=6V, f=1MHz 3.5 pF Reverse recovery time trr V R=6V, IF=5mA 4 ns SOT-323 2012-1 WILLAS ELECTRONIC CORP. z SOT-323 Plastic-Encapsulate Diodes DAN202U z
0.1 100 02 0 4 0 6 0 8 0 100 1000 0 5 10 15 20 1.0 1.2 1.4 1.6 Forward Characteristics Reverse Characteristics Power Derating Curve POWER DISSIPATION PD (mW) AMBIENT TEMPERATURE Ta ( )℃ Typical Characteristics 0.3 Ta =100℃ Ta =25℃ FORWARD CURRENT IF (mA) FORWARD VOLTAGE VF (V) 300 Ta=100℃ Ta=25℃ REVERSE CURRENT IR (nA) REVERSE VOLTAGE VR (V) Ta=25℃ f=1MHz Capacitance Characteristics REVERSE VOLTAGE VR (V) CAPACITANCE BETWEEN TERMINALS CT (pF) 2012-1 WILLAS ELECTRONIC CORP. SOT-323 Plastic-Encapsulate Diodes DAN202U
Dimensions in inches and (millimeters) SOT-323 Rev.D .056(1.40) .047(1.20) .096(2.45) .078(2.00) .004(0.10)MIN. .010(0.25) .003(0.08) .043(1.10) .032(0.80) .016(0.40) .008(0.20) .004(0.10)MAX. .087(2.20) .070(1.80) .054(1.35) .045(1.15) 2012-1 WILLAS ELECTRONIC CORP. SOT-323 Plastic-Encapsulate Diodes DAN202U