DAN202U KEXIN | Alldatasheet
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Technical content
www.kexin.com.cn 1 Diod es Switching Diodes DAN202U (KAN202U) ■ Features
- Four types of packaging are available
- High speed
- Suitable for high packing density layout
- High reliability ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Peak Reverse Voltage VRM 80 DC Reverse Voltage VR 80 Average forward current IO 100 Peak Forward Surge Current IFM 300 Power Dissipation Pd 200 mW Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 mA V ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Reverse breakdown voltage VR IR= 100 uA 80 Forward voltage VF IF= 100mA 1.2 Reverse voltage leakage current IR VR= 70 V 0.1 uA Junction capacitance Cj VR= 6 V, f= 1 MHz 3.5 pF Reverse recovery time trr IF=5mA , VR=6V 4 ns V ■ Marking Marking N
www.kexin.com.cn2 Diod es Switching Diodes DAN202U (KAN202U) ■ Typical Characterisitics 0 25 50 75 100 125 150 100 150 200 250 0.1 100 0 20 40 60 80 100 1000 0 5 10 15 20 1.0 1.2 1.4 1.6 Forward Characteristics Reverse Characteristics Power Derating Curve POWER DISSIPATION PD (mW) AMBIENT TEMPERATURE Ta ( )℃ 0.3 Ta =100℃ Ta =25℃ FORWARD CURRENT IF (mA) FORWARD VOLTAGE VF (V) 300 Ta=100℃ Ta=25℃ REVERSE CURRENT IR (nA) REVERSE VOLTAGE VR (V) Ta=25℃ f=1MHz Capacitance Characteristics REVERSE VOLTAGE VR (V) CAPACITANCE BETWEEN TERMINALS CT (pF)