DAN202K KEXIN | Alldatasheet
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Technical content
www.kexin.com.cn 1 Dio des Switching Diodes DAN202K (KAN202K) ■ Features
- Ultra high speed switching
- High reliability 0.4+0.1 -0.1 2.9+0.1 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.1 2.4+0.1 -0.1 1.3+0.1 -0.1 0-0.1 0.38+0.1 -0.1 0.97+0.1 -0.1 0.55 0.4 1 2 Unit: mmSOT-23 0.1+0.05 -0.01 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Reverse Voltage VRM 80 Reverse Voltage (DC) VR 80 Average rectified forward current (Single) 100 Average rectified forward current (double) 150 Forward Current (Single) 300 Forward Current (Double) 450 Surge current (t=1us) (Single) 4 Surge current (t=1us) (Double) 6 Power Dissipation Pd 200 mW Thermal Resistance Junction to Ambient RθJA 556 ℃/W Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 V Isurge A IFM Io mA ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Reverse breakdown voltage VR IR= 100 uA 80 Forward voltage VF IF= 100 mA 1.2 Reverse voltage leakage current IR VR= 70 V 0.1 uA Capacitance between terminals Ct VR= 6 V, f= 1 MHz 3.5 pF Reverse recovery time trr VR=6V,IF=5mA, RL=50Ω 4 ns V ■ Marking Marking N* 1 2
www.kexin.com.cn2 Diod es Switching Diodes DAN202K (KAN202K) ■ Typical Characterisitics 0.1 100 0 100 200 300 400 500 600 700 800 900 1000 Ta=-25℃ Ta=125℃ Ta=75℃ Ta=25℃Ta=150℃ 0.01 0.1 100 1000 10000 0 10 20 30 40 50 60 70 80 Ta=125℃ Ta=-25℃ Ta=25℃ Ta=75℃ Ta=150℃ 0.1 0 5 10 15 20 f=1MHz FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(nA) REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS VF DISPERSION MAP FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(nA) IR DISPERSION MAP CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ct DISPERSION MAP IFSM DISPERSION MAP PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS PEAK SURGE FORWARD CURRENT:IFSM(A) TIME:t(ms) IFSM-t CHARACTERISTICS TIME:t(ms) Rth-t CHARACTERISTICS TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) trr DISPERSION MAP REVERSE RECOVERY TIME:trr(ns) ELECTROSTATIC DISCHARGE TEST ESD(KV) ESD DISPERSION MAP 900 910 920 930 940 950 AVE:921.7m Ta=25℃ IF=100mA n=30pcs 100 Ta=25℃ VR=80V n=30pcs AVE:9.655nA AVE:3.50A 8.3ms Ifsm 1cyc AVE:1.93ns Ta=25℃ VR=6V IF=5mA RL=50Ω n=10pcs 1 10 100 8.3ms Ifsm 1cyc 8.3ms 100 0.1 1 10 100 t Ifsm 100 1000 0.001 0.01 0.1 1 10 100 1000 1ms IM=100mA IF=10A 300us time Mounted on epoxy board Rth(j-c) Rth(j-a) C=100pF R=1.5kΩ C=200pF R=0Ω AVE:0.97kV AVE:2.54kV AVE:1.17pF Ta=25℃ VR=6V f=1MHz n=10pcs