DAMI160N100 DACO | Alldatasheet

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Absolute Maximum Ratings (Tc=25°C unless otherwise noted) Ɍ!RDS(ON) < 4.0PŸ#9 9GS VIsolation Voltage (A.C. 1 minute) iso 2500 V MMounting torque (M4 Screw) d 1.3 Nm Ɍ! Isolation Type Package Ɍ! Electrically Isolation base plate -XQH Preliminary @ T C C°100= @ T 'LPHQVLRQVLQLQFKHVDQG PLOOLPHWHUV SOT-227 G S S D G A DH C K I F O E J M ØL NB Q DIMENSIONS DIM MMINCHES MIN MXA MIN MXA .460 .307 .029 .073 1.487 1.250 .931 .996 .586 .492 .161 .161 .181 .165 1.184 .217 .484 .322 .033 .082 1.502 1.258 .956 1.007 .594 .516 .169 .169 .191 .177 1.192 .244 11.68 7.80 .75 1.85 37.80 31.75 23.65 25.30 14.90 12.50 4.10 4.10 4.60 4.20 30.10 5.50 12.28 8.20 .84 2.10 38.20 32.00 24.30 25.60 15.10 13.10 4.30 4.30 4.95 4.50 30.30 6.20 A B C D E F G H I J K L M N O P Q M4*8 P

Parameter Symbol Conditions Min. Typ. Max. Unit OFF Characteristics Drain-Source Breakdown Voltage BV DSS VGS=0VǴǴǴǴIDS=3mA 100 - - V Zero Gate Voltage Drain Current I DSS VGS=0VǴǴǴǴVDS=100V - - 50 uA I egakaeL ydoB-etaG GSS VGS=±20VǴǴǴǴVDS=0V - - 200 nA ON Characteristics Gate Threshold Voltage V TH VDS=VGSǴǴǴǴIDS=8mA 2.5 - 3.5 V Drain-Source On-State Resistance R DS(on) VGS=10VǴǴǴǴIDS=100A - 3.5 4.0 PŸ Dynamic Characteristics C ecnaticapaC tupnI iss - 15600 C ecnaticapaC tuptuO oss - 712 Reverse Transfer Capacitance C rss VDS=25V VGS=0V Freq.=1MHz - 501 pF Switching Characteristics t emiT yaleD nO-nruT d(on) - 81 - Rise Time t r - 46 - t emiT yaleD ffO-nruT d(off) - 168 - Fall Time t f VDS=50V VGS=10V IDS=80A - 50 - ns Total Gate Charge at 10V Q g - 282 Gate to Source Charge Q gs - 138 - G a t e t o D r a i n C h a r g e Q gd VDS=50V VGS=10V IDS=80A - 118 - nC Reverse Diode Characteristics Drain-Source Diode Forward Voltage VF TJ =25°CǴǴǴǴIF=100A - - 0.9 V DACO SEMICONDUCTOR CO., LTD. DAMI160N100 Notes: 1. Pulse Test: Pulse Width ” 300͔s, Duty Cycle > 2%. ZZZGDFRVHPLFRPWZ Electrical Characteristics @ TJ =25°C (unless otherwise specified) -XQH Forward Transconductance g fs - 97 -S Diode Continuous Forward Current Diode Pulsed Current Reverse Recovery time T RR I F,pulse I F - 120 640 160 A A ns Note1 Gate Resistance R G Ÿ-1 . 9 2 . 9 I I F =0.5VdIR =1.0Ad RR =0.25A þVDS㕐㕐þ>2þI þRD Note1 DS(on)M ǴǴǴǴ I D =100A

Fig 1. Power dissipation Fig 3. Safe operating area Fig 5. Typ. output characteristics Fig 2. Drain current Fig 4. Maximium Transient Thermal Impedance Fig 6. Typ. drain-source on resistance DACO SEMICONDUCTOR CO., LTD. DAMI160N100 Typical Characteristics ZZZGDFRVHPLFRPWZ -XQH TC [°C] Ptot [W] 100 150 200 152 228 304 380 456 532 Ptot =f(TC) ID=f(TC); VGS •9 TC [°C] ID [A] 100 150 200 120 150 180 ID [A] 10-1 100 101 102 103 10-1 100 101 102 103 104 ID=f(VDS);TC=25°C; D=0;parameter: tp 0.001 0.010 0.100 Pulse Width - Seconds R(th)JC [ ºC / W] 0.300 V DS [V] ID [A] ID=f(VDS); Tj=25°C;parameter: VGS ID [A] R DS(on) >PŸ@ 100 200 300 400 500 600 2.0 3.0 4.0 5.0 RDS(on)=f(ID); Tj=25°C;parameter: VGS VDS [V] PV PV wV wV wV 100 150 200 250 0 0.3 0.6 0.9 1.2

Fig 9. Drain-source on-state resistance Fig 11. Typ. capacitances Fig 10. Typ. gate threshold voltage Fig 12. Typical forward characteristics of reverse diode DACO SEMICONDUCTOR CO., LTD. DAMI160N100 Typical Characteristics ZZZGDFRVHPLFRPWZ -XQH TJ [°C] VDS [V] C [pF] RDS(on)=f(Tj); ID=150A; VGS=10V VGS(th)=f(Tj); VGS=VDS;parameter: ID C=f(VDS); VGS=0V; f=1MHz R DS(on) >PŸ@ T j [°C] -60 -20 100 140 180 PD[ W\\S V GS(th) [V] -60 -20 100 140 180 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 02 04 06 08 0 1 0 0 10 1 10 2 10 3 10 4 10 5 &UVV &RVV &LVV Volts [V] Amp [A] 10 0 10 1 10 2 10 3 1.4 1.6 Fig 7. Typ. transfer characteristics Fig 8. Typ. forward transconductance ID=f(VGS);| VDS|>2|ID|RDS(on)max;parameter:Tj 120 160 200 ID [A] V GS [V] gfs=f(ID); Tj=25°C ID[A] g [S] 100 100 120 fs

Fig 13. Forward derating curve of reverse diode Fig 14. Peak forward surge current of reverse diode DACO SEMICONDUCTOR CO., LTD. DAMI160N100 Typical Characteristics ZZZGDFRVHPLFRPWZ -XQH Fig 15. Typical reverse diode characteristics 100 125 150 175 120 150 6LQJOH3KDVH+DOI:DYH +]5HVLVWLYHRU,QGXFWLYH/RDG Amp [A] TC [°C] 100 125 150 175 128 256 384 512 640 Amp [A] Cycles Number Of Cycles At 60Hz PV6LQJOH+DOI 6LQH:DYH -('(&PHWKRG7 r& Volts [%] Instantaneous reverseleakage current [uA] 0 20 60 80 100 0.01 0.1 1.0 10 50 70 9030 7 r&- 7 r&- Fig 16. Gate charge waveforms