DAMH160N200 DACO | Alldatasheet
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Absolute Maximum Ratings (Tc=25°C unless otherwise noted) Ɍ!RDS(ON) < 10.3P#9 9GS VIsolation Voltage (A.C. 1 minute) iso 2500 V MMounting torque (M5 Screw) d 3-5 Nm Ɍ! Isolation Type Package Ɍ! Electrically Isolation base plate -DQ @ T C C°100= @ T Preliminary 1 23 HB-9434 A C B D HH I NN H M G JK L S R OP T U F E Q ',0(16,216
Parameter Symbol Conditions Min. Typ. Max. Unit OFF Characteristics Drain-Source Breakdown Voltage BV DSS VGS=0VǴǴǴǴIDS=3mA 200 - - V Zero Gate Voltage Drain Current I DSS VGS=0VǴǴǴǴVDS=200V - - 50 uA I egakaeL ydoB-etaG GSS VGS=±20VǴǴǴǴVDS=0V - - 200 nA ON Characteristics Gate Threshold Voltage V TH VDS=VGSǴǴǴǴIDS=8mA 2.0 2.5 3.5 V Drain-Source On-State Resistance R DS(on) VGS=10VǴǴǴǴIDS=100A - 10.0 10.3 P Dynamic Characteristics C ecnaticapaC tupnI iss - 30790 C ecnaticapaC tuptuO oss - 671 Reverse Transfer Capacitance C rss VDS=25V VGS=0V Freq.=1MHz - 389 pF Switching Characteristics t emiT yaleD nO-nruT d(on) - 88 - Rise Time t r - 36 - t emiT yaleD ffO-nruT d(off) - 204 - Fall Time t f VDD=100V VGS=10V IDS=80A - 40 - ns Total Gate Charge at 10V Q g - 198 Gate to Source Charge Q gs - 141 - G a t e t o D r a i n C h a r g e Q gd VDS=100V VGS=10V IDS=80A - 107 - nC Reverse Diode Characteristics Drain-Source Diode Forward Voltage VF TJ =25°CǴǴǴǴIF=100A - - 0.90 V DACO SEMICONDUCTOR CO., LTD. DAMH160N200 Notes: 1. Pulse Test: Pulse Width 300͔s, Duty Cycle > 2%. ZZZGDFRVHPLFRPWZ Electrical Characteristics @ TJ =25°C (unless otherwise specified) -DQ Forward Transconductance g fs þVDS㕐㕐þ>2þI þRD - 117 -S Note1 Diode Continuous Forward Current Diode Pulsed Current Reverse Recovery time T RR I F,pulse I F - 130 500 250 A A ns Note1 Gate Resistance R G -1 . 6 2 . 9 I I F =0.5VdIR =1.0Ad RR =0.25A RG=1.6 DS(on)M ǴǴǴǴ I D =100A
Fig 1. Power dissipation Fig 3. Safe operating area Fig 5. Typ. output characteristics Fig 2. Drain current Fig 4. Maximium Transient Thermal Impedance Fig 6. Typ. drain-source on resistance DACO SEMICONDUCTOR CO., LTD. DAMH160N200 Typical Characteristics ZZZGDFRVHPLFRPWZ -DQ TC [°C] Ptot [W] 100 150 200 176 264 352 440 528 616 Ptot =f(TC) ID=f(TC); VGS 9 TC [°C] ID [A] 100 150 200 104 130 156 ID [A] 10-1 100 101 102 103 10-1 100 101 102 103 104 wV wV wV PV ID=f(VDS); TC=25°C; D=0;parameter: tp 0.001 0.010 0.100 Pulse Width - Seconds R(th)JC [ ºC / W] 0.300 V DS [V] ID [A] 0 0.3 0.6 0.9 100 150 ID=f(VDS); Tj=25°C;parameter: VGS ID [A] R DS(on) >P@ RDS(on)=f(ID); Tj=25°C;parameter: VGS VDS [V] PV 100 200 300 400 500 600 1.2 1.5
Fig 9. Drain-source on-state resistance Fig 11. Typ. capacitances Fig 10. Typ. gate threshold voltage Fig 12. Typical forward characteristics of reverse diode DACO SEMICONDUCTOR CO., LTD. DAMH160N200 Typical Characteristics ZZZGDFRVHPLFRPWZ -DQ TJ [°C] VDS [V] C [pF] RDS(on)=f(Tj); ID=150A; VGS=10V VGS(th)=f(Tj); VGS=VDS;parameter: ID C=f(VDS); VGS=0V; f=1MHz R DS(on) >P@ T j [°C] -60 -20 100 140 180 V GS(th) [V] -60 -20 100 140 180 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 02 04 06 08 0 1 0 0 10 1 10 2 10 3 10 4 10 5 &UVV &RVV &LVV Volts [V] Amp [A] 10 0 10 1 10 2 10 3 1.4 1.6 Fig 7. Typ. transfer characteristics Fig 8. Typ. forward transconductance ID=f(VGS);| VDS|>2|ID|RDS(on)max;parameter:Tj 160 240 320 400 ID [A] V GS [V] gfs=f(ID); Tj=25°C ID[A] g [S] 100 150 200 108 144 180 216 fs PD[ W\\S
Fig 13. Forward derating curve of reverse diode Fig 14. Peak forward surge current of reverse diode DACO SEMICONDUCTOR CO., LTD. DAMH160N200 Typical Characteristics ZZZGDFRVHPLFRPWZ -DQ Fig 15. Typical reverse diode characteristics Fig 16. Typ. gate charge 100 125 150 175 104 130 6LQJOH3KDVH+DOI:DYH +]5HVLVWLYHRU,QGXFWLYH/RDG Amp [A] TC [°C] 100 125 150 175 140 280 420 560 700 Amp [A] Cycles Number Of Cycles At 60Hz PV6LQJOH+DOI 6LQH:DYH -('(&PHWKRG7 r& Volts [%] Instantaneous reverseleakage current [uA] 02 0 6 0 8 0 1 0 0 0.01 0.1 1.0 10 50 70 9030 7 r&- 7 r&- Qgate [nC] VGS [V] 120 160 VGS =f(Qgate ); ID=100A pulsed; parameter:VDD Fig 17. Gate charge waveforms 156