DAME30N20H DACO | Alldatasheet

Document overview

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Technical content

Features

ᅁVDSS = 20V ᅁRDS(ON) Typ.8mΩ @ VGS = 4.5V ᅁFully Avalanche Rated ᅁPb Free & RoHS Compliant ᅁESD Protection Diode Embedded

Applications

ᅁMB / VGA / Vcore ᅁ3RZHU&RQYHUWHUV ᅁPOL Applications ᅁSMPS 2 SR ᅁLi-Battery Protection Absolute Maximum Ratings (Tc=25°C unless otherwise noted) Parameter Symbol Ratings Unit Drain Source Voltage VDS 20 V Gate Source Voltage VGS ±10 V Drain Current Continuous @ Tc = 25°C ID A @ Tc = 100°C 19 Drain Current Pulsed@ TC = 25°C IDM 120 A Maximum Power Dissipation PD 26 W Storage Temperature Range TSTG -55 to +150 °C Operating Junction Temperature Range TJ -55 to +150 °C Thermal Resistance Junction to Case RθJc 4.8 °C/W May.2018 DAME30N20H nd

Electrical Characteristics @ T J =25°C (unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Unit OFF Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V᧨IDS=250uA 20 - - V Zero Gate Voltage Drain Current IDSS VGS=0V᧨VDS=20V - - 1 uA Gate-Body Leakage IGSS VGS=±10V᧨VDS=0V - - ±100 nA ON Characteristics Gate Threshold Voltage VTH VDS=VGS᧨IDS=250uA 0.3 0.6 1 V Static Drain-Source On-Resistance RDS(on) VGS=4.5V᧨IDS=5A - 8 10 mΩ Dynamic Characteristics Input Capacitance Ciss VDS=10V VGS=0V Freq.=1MHz - 1020 1480 pF Output Capacitance Coss - 160 240 Reverse Transfer Capacitance Crss - 110 160 Switching Characteristics Turn-On Delay Time Td(on) VDD=10V VGS=4.5V RG =25Ω IDS=1A - 6.8 13 ns Rise Time Tr - 20 38 Turn-Off Delay Time Td(off) - 41.8 79 Fall Time Tf - 13.2 25 Total Gate Charge Qg VDS=10V VGS=4.5V IDS=5A - 16.9 26 nC Gate to Source Charge Qgs - 1.1 3 Gate to Drain Charge Qgd - 4 7 Drain-Source Diode Characteristics Diode Forward Voltage VSD VGS=0V᧨IS=1A - - 1 V Notes: 1. Pulse Test: Pulse Width ʀʀ 300 ˩s, Duty Cycle ʀ 2%. 2. R R JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R R JC is guaranteed by design while R CA is determined by the user's board design. R JA shown below for single device operation on FR-4 in still air. May.2018 DAME30N20H

TC , Case Temperature (Ċ) ID , Continuous Drain Current (A) Fig.1 Continuous Drain Current vs. TC TJ , Junction Temperature ( Ċ) Normalized Gate Threshold Voltage (V) Fig.3 Normalized Vth vs. TJ Square Wave Pulse Duration (s) Normalized Thermal Response (R/g537/g45/g38) Fig.5 Normalized Transient Response TJ , Junction Temperature (Ċ) Normalized On Resistance (m/g159) Fig.2 Normalized RDSON vs. TJ Qg , Gate Charge (nC) VGS , Gate to Source Voltage (V) Fig.4 Gate Charge Waveform ID , Continuous Drain Current (A) VDS , Drain to Source Voltage (V) Fig.6 Maximum Safe Operation Area DACO SEMICONDUCTOR CO., LTD. Typical Characteristics ZZZGDFRVHPLFRPWZ 0D\\ DAME30N20H

Fig.7 Switching Time Waveform Fig.8 EAS Waveform DACO SEMICONDUCTOR CO., LTD. ZZZGDFRVHPLFRPWZ 0D\\ Typical Characteristics DAME30N20H Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10%