DAME0D3N60A DACO | Alldatasheet
Document overview
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Technical content
Features
ᅁ V DSS = 60V ᅁ R DS(ON) Typ.1.2Ω @ V GS = 10V ᅁ Improved dv/dt capability ᅁ)DVWVZLWFKLQJ ᅁ Pb Free & RoHS Compliant ᅁ 100% EAS Guaranteed ᅁ G-S ESD protection diode embedded
Applications
ᅁ Motor Drive ᅁ3RZHU7RROV ᅁ LED applications Absolute Maximum Ratings (Tc=25°C unless otherwise noted) Parameter Symbol Rating s Unit Drain Source Voltage V DS V Gate Source Voltage V GS ±20 V Drain Current Continuous @ T C = 25°C I D 0.3 @ T C 100°C 0.2 Drain Current Pulsed I DM 1.2 A Maximum Power Dissipation @ T C = 25 P D 0.35 W Storage Temperature Range T STG -50 to +150 Operating Junction Temperature Range T J -50 to +150 Thermal Resistance Junction to ambient R θ JA 357 °C/W Feb 2019 DAME0D3N60A A
Electrical Characteristics @ T J =25°C (unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Unit OFF Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V᧨IDS=250uA 60 - - V Zero Gate Voltage Drain Current IDSS VGS=0V᧨VDS=60V - - 1 uA Gate-Body Leakage IGSS VGS=±20V᧨VDS=0V - - ±10 uA ON Characteristics Gate Threshold Voltage VTH VDS=VGS᧨IDS=250uA 1 1.6 2.5 V Static Drain-Source On-Resistance RDS(on) VGS=10V᧨IDS=0.5A - 1.2 1.6 Ω Dynamic Characteristics Input Capacitance Ciss VDS=10V VGS=0V Freq.=1MHz - 30.6 45 pF Output Capacitance Coss - 5.5 10 Reverse Transfer Capacitance Crss - 4 8 Switching Characteristics Turn-On Delay Time Td(on) VDD=30V VGS=10V RG =6Ω IDS=0.2A - 3 6 ns Rise Time Tr - 5 10 Turn-Off Delay Time Td(off) - 14 27 Fall Time Tf - 9 17 Total Gate Charge Qg VDS=30V VGS=10V IDS=0.2A - 1.1 2 nC Gate to Source Charge Qgs - 0.1 0.2 Gate to Drain Charge Qgd - 0.23 0.5 Drain-Source Diode Characteristics Diode Forward Voltage VSD VGS=0V᧨IS=1A - - 1 V Notes: 1. Pulse Test: Pulse Width ʀʀ 300 ˩s, Duty Cycle ʀ 2%. 2. VDD=25V,VGS=10V,L=1mH,IAS=7A.,RG=25Ω, Starting TJ=25°C 3. Repetitive Rating : Pulsed width limited by maximum junction temperature. 4. Essentially independent of operating temperature. Feb 2019 DAME0D3N60A
VDS , Drain to Source Voltage (V) ID , Continuous Drain Current (A) Fig.1 Output Characteristics TJ , Junction Temperature (Ċ) Normalized On Resistance () Fig.3 Normalized RDSON vs. TJ Qg , Gate Charge (nC) VGS , Gate to Source Voltage (V) Fig.5 Gate Charge Waveform TC , Case Temperature (Ċ) ID , Continuous Drain Current (A) Fig.2 Continuous Drain Current vs. TC TJ , Junction Temperature ( Ċ) Normalized Gate Threshold Voltage (V) Fig.4 Normalized Vth vs. TJ C , Capacitance (pF) VDS , Drain to Source Voltage (V) Fig.6 Capacitance Characteristics DACO SEMICONDUCTOR CO., LTD. Typical Characteristics ZZZGDFRVHPLFRPWZ )HE DAME0D3N60A
DACO SEMICONDUCTOR CO., LTD. ZZZGDFRVHPLFRPWZ Typical Characteristics DAME0D3N60A Fig.9 Switching Time Waveform Fig.10 EAS Waveform Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% IAS VGS BVDSS VDD EAS= 1
2 LxI AS
Square Wave Pulse Duration (s) Normalized Thermal Response (RĬ-$) Fig.7 Normalized Transient Impedance ID , Continuous Drain Current (A) VDS , Drain to Source Voltage (V) Fig.8 Maximum Safe Operation Area )HE