DAM60N100C DACO | Alldatasheet
Document overview
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Technical content
Features
ᅁ V DSS = 100V ᅁ R DS(ON) Typ.15mΩ @ V GS = 10V ᅁ Fully Avalanche Rated ᅁ Pb Free & RoHS Compliant
Applications
ᅁ Backlighting ᅁ3RZHU&RQYHUWHUV ᅁ Synchronous Rectifiers Absolute Maximum Ratings Parameter Symbol Ratings Unit Drain Source Voltage V DS 100 V Gate Source Voltage V GS ±20 V Drain Current Continuous @ T C = 25°C I D A @ T C = 100°C Drain Current Pulsed@ T C = 25°C I DM 180 A Single Pulse Avalanche Energy EAS 100 mJ Single Pulse Avalanche Current IAS A Maximum Power Dissipation P D 113 W Storage Temperature Range T STG -50 to +150 Operating Junction Temperature Range T J -50 to +150 Thermal Resistance Junction to Case R θ JC 1.1 °C/W DAM60N100C Note3 $XJ (Tc=25°C unless otherwise noted)
Electrical Characteristics @ T J =25°C (unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Unit OFF Characteristics Drain -Source Breakdown Voltage BV DSS V GS =0V᧨I DS =250uA 100 V Zero Gate Voltage Drain Current I DSS V GS =0V᧨V DS =100V uA Gate -Body Leakage I GSS V GS =±20V᧨V DS =0V ±100 nA ON Characteristics Gate Threshold Voltage V TH V DS GS DS =250uA V Static Drain -Source On-Resistance R DS(on) V GS =10V᧨I DS =25A mΩ Dynamic Characteristics Input Capacitance C iss V DS =50V V GS =0V Freq.= 1MHz 1850 3300 pF Output Capacitance C oss 160 300 Reverse Transfer Capacitance C rss 160 Switching Characteristics Turn -On Delay Time T d(on) V DD =50V V GS =10V R G =6Ω I DS =1A ns Rise Time T r Turn -Off Delay Time T d(off) Fall Time T f Total Gate Charge Q g V DS =50V V GS =10V I DS =5A 37.6 nC Gate to Source Charge Q gs 11.7 Gate to Drain Charge Q gd 9.8 Drain -Source Diode Characteristics Diode Forward Voltage V SD V GS =0V᧨I S =1A V Notes: 1.Pulse Test: Pulse Width ʀʀ 300 ˩s, Duty Cycle ʀ 2%. 2. V DD =50V,V GS =10V,L=0.1mH,I AS =45A.,R G =25Ω, Starting T J =25°C DAM60N100C $XJ 3. R JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R JC is guaranteed by design while R CA is determined by the user's board design. R JA shown below for single device operation on FR-4 in still air.
TC , Case Temperature (Ċ) ID , Continuous Drain Current (A) Fig.1 Continuous Drain Current vs. TC TJ , Junction Temperature ( Ċ) Normalized Gate Threshold Voltage (V) Fig.3 Normalized Vth vs. TJ Square Wave Pulse Duration (s) Normalized Thermal Response (R/g537/g45/g38) Fig.5 Normalized Transient Impedance TJ , Junction Temperature (Ċ) Normalized On Resistance (m/g159) Fig.2 Normalized RDSON vs. TJ Qg , Gate Charge (nC) VGS , Gate to Source Voltage (V) Fig.4 Gate Charge Characteristics ID , Drain Current (A) VDS , Drain to Source Voltage (V) Fig.6 Maximum Safe Operation Area DACO SEMICONDUCTOR CO., LTD. Typical Characteristics ZZZGDFRVHPLFRPWZ $XJ DAM60N100C
Fig.7 Switching Time Waveform Fig.8 Gate Charge Waveform DACO SEMICONDUCTOR CO., LTD. ZZZGDFRVHPLFRPWZ Aug.2017 Typical Characteristics DAM60N100C Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10%