DAM5N501C DACO | Alldatasheet

Document overview

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Technical content

Features

ᅁ V DSS = 500V ᅁ R DS(ON) Typ.1.1Ω @ V GS = 10V ᅁ Fully Avalanche Rated ᅁ Pb Free & RoHS Compliant

Applications

ᅁ Backlighting ᅁ3RZHU&RQYHUWHUV ᅁ Synchronous Rectifiers Absolute Maximum Ratings Parameter Symbol Ratings Unit Drain Source Voltage V DS 500 V Gate Source Voltage V GS ±30 V Drain Current Continuous @ T C = 25°C I D A @ T C = 100°C 3.1 Drain Current Pulsed@ T C = 25°C I DM A Single Pulse Avalanche Energy EAS 280 mJ Single Pulse Avalanche Current IAS 7.5 A Maximum Power Dissipation P D 69.5 W Storage Temperature Range T STG -55 to +150 Operating Junction Temperature Range T J -55 to +150 Thermal Resistance Ju nction to Case R θ JC 1.8 °C/W DAM5N501C Note3 $XJ (Tc=25°C unless otherwise noted)

Electrical Characteristics @ T J =25°C (unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Unit OFF Characteristics Drain -Source Breakdown Voltage BV DSS V GS =0V᧨I DS =250uA 500 V Zero Gate Voltage Drain Current I DSS V GS =0V᧨V DS =500V uA Gate -Body Leakage I GSS V GS =±30V᧨V DS =0V ±100 nA ON Characteristics Gate Threshold Voltage V TH V DS GS DS =250uA V Static Drain -Source On-Resistance R DS(on) V GS =10V᧨I DS =2A 1.1 1.5 Ω Dynamic Characteristics Input Capacitance C iss V DS =25V V GS =0V Freq.= 1MHz 570 1140 pF Output Capacitance C oss 120 Reverse Transfer Capacitance C rss Switching Characteristics Turn -On Delay Time T d(on) V DD =250V V GS =10V R G =25Ω I DS =2A ns Rise Time T r Turn -Off Delay Time T d(off) Fall Time T f Total Gate Charge Q g V DS =400V V GS =10V I DS =4A nC Gate to Source Charge Q gs 3.6 7.2 Gate to Drain Charge Q gd 6.5 Drain -Source Diode Characteristics Diode Forward Voltage V SD V GS =0V᧨I S =1A V Notes: 1.Pulse Test: Pulse Width ʀʀ 300 ˩s, Duty Cycle ʀ 2%. 2. V DD =50V,V GS =10V,L=10mH,I AS =7.5A.,R G =25Ω, Starting T J =25°C DAM5N501C $XJ 3. R JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R JC is guaranteed by design while R CA is determined by the user's board design. R JA shown below for single device operation on FR-4 in still air.

TC , Case Temperature (°C) ID , Continuous Drain Current (A) Fig.1 Continuous Drain Current vs. TC TJ , Junction Temperature (°C) Normalized Gate Threshold Voltage (V) Fig.3 Normalized Vth vs. TJ Square Wave Pulse Duration (s) Normalized Thermal Response (R/g537/g45/g38) Fig.5 Normalized Transient Impedance TJ , Junction Temperature (°C) Normalized On Resistance (/g159) Fig.2 Normalized RDSON vs. TJ Qg , Gate Charge (nC) VGS , Gate to Source Voltage (V) Fig.4 Gate Charge Waveform VDS , Drain to Source Voltage (V) Fig.6 Maximum Safe Operation Area DACO SEMICONDUCTOR CO., LTD. Typical Characteristics ZZZGDFRVHPLFRPWZ $XJ DAM5N501C ID , Continuous Drain Current (A)

Fig.7 Switching Time Waveform Fig.8 EAS Waveform DACO SEMICONDUCTOR CO., LTD. ZZZGDFRVHPLFRPWZ $XJ Typical Characteristics DAM5N501C Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10%