DAM55N30D DACO | Alldatasheet

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Technical content

Features

ᅁVDSS = 30V ᅁRDS(ON) Typ.7.5mΩ @ VGS = 10V ᅁFully Avalanche Rated ᅁPb Free & RoHS Compliant

Applications

ᅁBacklighting ᅁ3RZHU&RQYHUWHUV ᅁSynchronous Rectifiers Absolute Maximum Ratings (Tc=25°C unless otherwise noted) Parameter Symbol Ratings Unit Drain Source Voltage VDS 30 V Gate Source Voltage VGS ±20 V Drain Current Continuous @ Tc = 25°C ID A @ Tc = 100°C 35 Drain Current Pulsed@ TC = 25°C IDM 220 A Single Pulse Avalanche Energy EAS 45 mJ Single Pulse Avalanche Current IAS 30 A Maximum Power Dissipation PD 40 W Storage Temperature Range TSTG -55 to +150 °C Operating Junction Temperature Range TJ -55 to +150 °C Thermal Resistance Junction to Case RθJc 3.1 °C/W Aug.2017 DAM55N30D Note3

Electrical Characteristics @ T J =25°C (unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Unit OFF Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V᧨IDS=250uA 30 - - V Zero Gate Voltage Drain Current IDSS VGS=0V᧨VDS=30V - - 1 uA Gate-Body Leakage IGSS VGS=±20V᧨VDS=0V - - ±100 nA ON Characteristics Gate Threshold Voltage VTH VDS=VGS᧨IDS=250uA 1 1.6 2.5 V Static Drain-Source On-Resistance RDS(on) VGS=10V᧨IDS=16A - 7.5 9 mΩ Dynamic Characteristics Input Capacitance Ciss VDS=25V VGS=0V Freq.=1MHz - 750 - pF Output Capacitance Coss - 150 - Reverse Transfer Capacitance Crss - 110 - Switching Characteristics Turn-On Delay Time Td(on) VDD=15V VGS=10V RG =3.3Ω IDS=15A - 4.8 - ns Rise Time Tr - 12.5 - Turn-Off Delay Time Td(off) - 27.6 - Fall Time Tf - 8.2 - Total Gate Charge Qg VDS=15V VGS=4.5V IDS=20A - 7.5 - nC Gate to Source Charge Qgs - 1.3 - Gate to Drain Charge Qgd - 4.5 - Drain-Source Diode Characteristics Diode Forward Voltage VSD VGS=0V᧨IS=1A - - 1 V Notes: 1.Pulse Test: Pulse Width ʀʀ 300 ˩s, Duty Cycle ʀ 2%. 2. VDD=25V,VGS=10V,L=0.1mH,IAS=30A.,RG=25Ω, Starting TJ=25°C 3. R JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R R JC is guaranteed by design while R CA is determined by the user's board design. R JA shown below for single device operation on FR-4 in still air. Aug.2017 DAM55N30D

TC , Case Temperature (Ċ) ID , Continuous Drain Current (A) Fig.1 Continuous Drain Current vs. TC TJ , Junction Temperature ( Ċ) Normalized Gate Threshold Voltage (V) Fig.3 Normalized Vth vs. TJ Square Wave Pulse Duration (s) Normalized Thermal Response (R/g537/g45/g38) Fig.5 Normalized Transient Impedance TJ , Junction Temperature (Ċ) Normalized On Resistance (m/g159) Fig.2 Normalized RDSON vs. TJ Qg , Gate Charge (nC) VGS , Gate to Source Voltage (V) Fig.4 Gate Charge Waveform ID , Continuous Drain Current (A) VDS , Drain to Source Voltage (V) Fig.6 Maximum Safe Operation Area DACO SEMICONDUCTOR CO., LTD. Typical Characteristics ZZZGDFRVHPLFRPWZ $XJ DAM55N30D

Fig.7 Switching Time Waveform Fig.8 EAS Waveform DACO SEMICONDUCTOR CO., LTD. ZZZGDFRVHPLFRPWZ Aug.2017 Typical Characteristics DAM55N30D Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10%