DAM3W500G DACO | Alldatasheet
Document overview
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Technical content
Features
ᅁVDSS = 500V ᅁRDS(ON) Typ.2.6Ω @ VGS = 10V ᅁImproved dv/dt capability ᅁ)DVWVZLWFKLQJ ᅁPb Free & RoHS Compliant ᅁGreen Device Available
Applications
ᅁBacklighting ᅁ3RZHU&RQYHUWHUV ᅁSynchronous Rectifiers Absolute Maximum Ratings (Tc=25°C unless otherwise noted) Parameter Symbol Ratings Unit Drain Source Voltage VDS 500 V Gate Source Voltage VGS ±30 V Drain Current Continuous @ Tc = 25°C ID A @ Tc = 100°C 1.9 Drain Current Pulsed@ TC = 25°C IDM 15 A Single Pulse Avalanche Energy EAS 13 mJ Single Pulse Avalanche Current IAS 5 A Maximum Power Dissipation PD 63 W Storage Temperature Range TSTG -55 to +150 °C Operating Junction Temperature Range TJ -55 to +150 °C Thermal Resistance Junction to Case RθJc 2 °C/W DAM3W500G Note3 Apr .2018
Electrical Characteristics @ T J =25°C (unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Unit OFF Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V᧨IDS=250uA 500 - - V Zero Gate Voltage Drain Current IDSS VGS=0V᧨VDS=500V - - 1 uA Gate-Body Leakage IGSS VGS=±30V᧨VDS=0V - - ±100 nA ON Characteristics Gate Threshold Voltage VTH VDS=VGS᧨IDS=250uA 3 4 5 V Static Drain-Source On-Resistance RDS(on) VGS=10V᧨IDS=1A - 2.6 3.6 Ω Dynamic Characteristics Input Capacitance Ciss VDS=25V VGS=0V Freq.=1MHz - 440 - pF Output Capacitance Coss - 35 - Reverse Transfer Capacitance Crss - 4 - Switching Characteristics Turn-On Delay Time Td(on) VDD=300V VGS=10V RG =2.5Ω IDS=1A - 18 - ns Rise Time Tr - 7 - Turn-Off Delay Time Td(off) - 23 - Fall Time Tf - 16 - Total Gate Charge Qg VDS=400V VGS=10V IDS=1A - 10 - nC Gate to Source Charge Qgs - 2.6 - Gate to Drain Charge Qgd - 3.2 - Drain-Source Diode Characteristics Diode Forward Voltage VSD VGS=0V᧨IS=1A - - 1 V Notes: 1. Pulse Test: Pulse Width ʀʀ 300 ˩s, Duty Cycle ʀ 2%. 2. VDD=50V,VGS=10V,L=1mH,IAS=5A. RG=25Ω, Starting TJ=25°C 3. R JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R R JC is guaranteed by design while R R CA is determined by the user's board design. R JA shown below for single device operation on FR-4 in still air. DAM3W500G Apr .2018
TC , Case Temperature (Ċ) ID , Continuous Drain Current (A) Fig.1 Continuous Drain Current vs. TC TJ , Junction Temperature ( Ċ) Normalized Gate Threshold Voltage (V) Fig.3 Normalized Vth vs. TJ Square Wave Pulse Duration (s) Normalized Thermal Response (R/g537/g45/g38) Fig.5 Normalized Transient Impedance TJ , Junction Temperature (Ċ) Normalized On Resistance (/g159) Fig.2 Normalized RDSON vs. TJ Qg , Gate Charge (nC) VGS , Gate to Source Voltage (V) Fig.4 Gate Charge Waveform ID , Continuous Drain Current (A) VDS , Drain to Source Voltage (V) Fig.6 Maximum Safe Operation Area DACO SEMICONDUCTOR CO., LTD. Typical Characteristics ZZZGDFRVHPLFRPWZ $SU DAM3W500G
Fig.7 Switching Time Waveform Fig.8 EAS Waveform DACO SEMICONDUCTOR CO., LTD. ZZZGDFRVHPLFRPWZ $SU Typical Characteristics DAM3W500G Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10%