DAM3N100L DACO | Alldatasheet
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Technical content
Features
ᅁVDSS = 100V ᅁRDS(ON) Typ.160mΩ @ VGS = 10V ᅁFully Avalanche Rated ᅁPb Free & RoHS Compliant
Applications
ᅁHigh efficient switched mode power supplies ᅁNetworking ᅁ/RDG6ZLWFK ᅁNetworking Absolute Maximum Ratings (Tc=25°C unless otherwise noted) Parameter Symbol Ratings Unit Drain Source Voltage VDS 100 V Gate Source Voltage VGS ±20 V Drain Current Continuous @ Tc = 25°C ID A @ Tc = 100°C 1.8 Drain Current Pulsed@ TC = 25°C IDM 12 A Maximum Power Dissipation PD 1.78 W Storage Temperature Range TSTG -50 to +150 °C Operating Junction Temperature Range TJ -50 to +150 °C Thermal Resistance Junction to Case RθJc 30 °C/W Thermal Resistance Junction to ambient R θJA 70 °C/W Jun.2018 DAM3N100L
Electrical Characteristics @ T J =25°C (unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Unit OFF Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V᧨IDS=250uA 100 - - V Zero Gate Voltage Drain Current IDSS VGS=0V᧨VDS=100V - - 1 uA Gate-Body Leakage IGSS VGS=±20V᧨VDS=0V - - ±100 nA ON Characteristics Gate Threshold Voltage VTH VDS=VGS᧨IDS=250uA 1.2 1.8 2.5 V Static Drain-Source On-Resistance RDS(on) VGS=10V᧨IDS=2A - 160 185 mΩ Dynamic Characteristics Input Capacitance Ciss VDS=50V VGS=0V Freq.=1MHz - 820 1190 pF Output Capacitance Coss - 35 55 Reverse Transfer Capacitance Crss - 20 30 Switching Characteristics Turn-On Delay Time Td(on) VDD=30V VGS=10V RG =3.3Ω IDS=1A - 1.6 3 ns Rise Time Tr - 6.6 13 Turn-Off Delay Time Td(off) - 11.5 22 Fall Time Tf - 3.6 7 Total Gate Charge Qg VDS=50V VGS=10V IDS=2A - 13.4 21 nC Gate to Source Charge Qgs - 2.9 6 Gate to Drain Charge Qgd - 1.7 4 Drain-Source Diode Characteristics Diode Forward Voltage VSD VGS=0V᧨IS=1A - - 1 V Notes: 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. Pulse Test: Pulse Width ʀʀ 300 ˩s, Duty Cycle ʀ 2%. Jun.2018 DAM3N100L
TC , Case Temperature (Ċ) ID , Continuous Drain Current (A) Fig.1 Continuous Drain Current vs. TC TJ , Junction Temperature ( Ċ) Normalized Gate Threshold Voltage (V) Fig.3 Normalized Vth vs. TJ Square Wave Pulse Duration (s) Normalized Thermal Response (Rș-$) Fig.5 Normalized Transient Impedance TJ , Junction Temperature (Ċ) Normalized On Resistance (m) Fig.2 Normalized RDSON vs. TJ Qg , Gate Charge (nC) VGS , Gate to Source Voltage (V) Fig.4 Gate Charge Waveform ID , Continuous Drain Current (A) VDS , Drain to Source Voltage (V) Fig.6 Maximum Safe Operation Area DACO SEMICONDUCTOR CO., LTD. Typical Characteristics ZZZGDFRVHPLFRPWZ -XQ DAM3N100L
Fig.7 Switching Time Waveform Fig.8 Gate Charge Waveform DACO SEMICONDUCTOR CO., LTD. ZZZGDFRVHPLFRPWZ -XQ Typical Characteristics DAM3N100L Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10%