DAM35P60D DACO | Alldatasheet
Document overview
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Technical content
Features
ᅁVDSS = -60V ᅁRDS(ON) Typ.22mΩ @ VGS = -10V ᅁFully Avalanche Rated ᅁPb Free & RoHS Compliant
Applications
ᅁBacklighting ᅁ3RZHU&RQYHUWHUV ᅁSynchronous Rectifiers Absolute Maximum Ratings (Tc=25°C unless otherwise noted) Parameter Symbol Ratings Unit Drain Source Voltage VDS -60 V Gate Source Voltage VGS ±20 V Drain Current Continuous @ Tc = 25°C ID -35 A @ Tc = 100°C -22.1 Drain Current Pulsed@ TC = 25°C IDM -140 A Maximum Power Dissipation P D 72.6 W Storage Temperature Range T STG -55 to +150 °C Operating Junction Temperature Range TJ -55 to +150 °C Thermal Resistance Junction to Case RθJc 1.72 °C/W Aug.2017 DAM35P60D Thermal Resistance Junction to ambient RθJA 62 °C/W
Electrical Characteristics @ T J =25°C (unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Unit OFF Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V᧨IDS=-250uA -60 - - V Zero Gate Voltage Drain Current IDSS VGS=0V᧨VDS=-60V - - -1 uA Gate-Body Leakage IGSS VGS=±20V᧨VDS=0V - - ±100 nA ON Characteristics Gate Threshold Voltage VTH VDS=VGS᧨IDS=-250uA -1 -1.6 -2.5 V Static Drain-Source On-Resistance RDS(on) VGS=-10V᧨IDS=-8A - 22 28 mΩ Dynamic Characteristics Input Capacitance Ciss VDS=-25V VGS=0V Freq.=1MHz - 2595 3900 pF Output Capacitance Coss - 162 240 Reverse Transfer Capacitance Crss - 115 170 Switching Characteristics Turn-On Delay Time Td(on) VDD=-30V VGS=-10V RG =6Ω IDS=-1A - 25 50 ns Rise Time Tr - 13.8 28 Turn-Off Delay Time Td(off) - 148 290 Fall Time Tf - 51 100 Total Gate Charge Qg VDS=-30V VGS=-10V IDS=-5A - 43.8 88 nC Gate to Source Charge Qgs - 4.6 9 Gate to Drain Charge Qgd - 8.3 17 Drain-Source Diode Characteristics Diode Forward Voltage VSD VGS=0V᧨IS=-1A - - -1 V Notes: 1. Pulse Test: Pulse Width ʀʀ 300 ˩s, Duty Cycle ʀ 2%. 2. R R JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R R JC is guaranteed by design while R CA is determined by the user's board design. R JA shown below for single device operation on FR-4 in still air. Aug.2017 DAM35P60D
TC , Case Temperature (Ċ) -ID , Continuous Drain Current (A) Fig.1 Continuous Drain Current vs. TC TJ , Junction Temperature ( Ċ) Normalized Gate Threshold Voltage (V) Fig.3 Normalized Vth vs. TJ Square Wave Pulse Duration (s) Normalized Thermal Response (Rș-$) Fig.5 Normalized Transient Impedance TJ , Junction Temperature (Ċ) Normalized On Resistance (m) Fig.2 Normalized RDSON vs. TJ Qg , Gate Charge (nC) -VGS , Gate to Source Voltage (V) Fig.4 Gate Charge Waveform -ID , Continuous Drain Current (A) -VDS , Drain to Source Voltage (V) Fig.6 Maximum Safe Operation Area DACO SEMICONDUCTOR CO., LTD. Typical Characteristics ZZZGDFRVHPLFRPWZ $XJ DAM35P60D
Fig.7 Switching Time Waveform Fig.8 Gate Charge Waveform DACO SEMICONDUCTOR CO., LTD. ZZZGDFRVHPLFRPWZ $XJ Typical Characteristics DAM35P60D