DAM30N200F DACO | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
Features
ᅁVDSS = 200V ᅁRDS(ON) Typ.19mΩ @ VGS = 10V ᅁFully Avalanche Rated ᅁPb Free & RoHS Compliant
Applications
ᅁBacklighting ᅁ3RZHU&RQYHUWHUV ᅁSynchronous Rectifiers Absolute Maximum Ratings (Tc=25°C unless otherwise noted) Parameter Symbol Ratings Unit Drain Source Voltage VDS 200 V Gate Source Voltage VGS ±20 V Drain Current Continuous @ Tc = 25°C ID A @ Tc = 100°C 19 Drain Current Pulsed@ TC = 25°C IDM 120 A Single Pulse Avalanche Energy EAS 280 mJ Single Pulse Avalanche Current IAS 75 A Maximum Power Dissipation PD 50 W Storage Temperature Range TSTG -50 to +150 °C Operating Junction Temperature Range TJ -50 to +150 °C Thermal Resistance Junction to Case RθJc 2.5 °C/W Aug.2017 DAM30N200F Note3
Electrical Characteristics @ T J =25°C (unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Unit OFF Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V᧨IDS=250uA 200 - - V Zero Gate Voltage Drain Current IDSS VGS=0V᧨VDS=200V - - 1 uA Gate-Body Leakage IGSS VGS=±20V᧨VDS=0V - - ±100 nA ON Characteristics Gate Threshold Voltage VTH VDS=VGS᧨IDS=250uA 1.5 2.2 3 V Static Drain-Source On-Resistance RDS(on) VGS=10V᧨IDS=12A - 19 24 mΩ Dynamic Characteristics Input Capacitance Ciss VDS=25V VGS=0V Freq.=1MHz - 15325 22000 pF Output Capacitance Coss - 573 900 Reverse Transfer Capacitance Crss - 34 70 Switching Characteristics Turn-On Delay Time Td(on) VDD=50V VGS=10V RG =6Ω IDS=1A - 55.2 100 ns Rise Time Tr - 64.6 120 Turn-Off Delay Time Td(off) - 202 400 Fall Time Tf - 88 160 Total Gate Charge Qg VDS=160V VGS=10V IDS=10A - 238 450 nC Gate to Source Charge Qgs - 62 140 Gate to Drain Charge Qgd - 58 150 Drain-Source Diode Characteristics Diode Forward Voltage VSD VGS=0V᧨IS=1A - - 1 V Notes: 1.Pulse Test: Pulse Width ʀʀ 300 ˩s, Duty Cycle ʀ 2%. 2. VDD=50V,VGS=10V,L=0.1mH,IAS=75A.,RG=25Ω, Starting TJ=25°C Aug.2017 DAM30N200F 3. R JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R R JC is guaranteed by design while R CA is determined by the user's board design. R JA shown below for single device operation on FR-4 in still air.
TC , Case Temperature (Ċ) ID , Continuous Drain Current (A) Fig.1 Continuous Drain Current vs. TC TJ , Junction Temperature ( Ċ) Normalized Gate Threshold Voltage (V) Fig.3 Normalized Vth vs. TJ Square Wave Pulse Duration (s) Normalized Thermal Response (R/g537/g45/g38) Fig.5 Normalized Transient Impedance TJ , Junction Temperature (Ċ) Normalized On Resistance (m/g159) Fig.2 Normalized RDSON vs. TJ Qg , Gate Charge (nC) VGS , Gate to Source Voltage (V) Fig.4 Gate Charge Characteristics ID , Drain Current (A) VDS , Drain to Source Voltage (V) Fig.6 Maximum Safe Operation Area DACO SEMICONDUCTOR CO., LTD. Typical Characteristics ZZZGDFRVHPLFRPWZ $XJ DAM30N200F
Fig.7 Switching Time Waveform Fig.8 Gate Charge Waveform DACO SEMICONDUCTOR CO., LTD. ZZZGDFRVHPLFRPWZ Aug.2017 Typical Characteristics DAM30N200F Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10%