DAM200N30C DACO | Alldatasheet
Document overview
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Technical content
Features
ᅁ V DSS = 30V ᅁ R DS(ON) Typ.1.7mΩ @ V GS = 10V ᅁ Fully Avalanche Rated ᅁ Pb Free & RoHS Compliant
Applications
ᅁ Backlighting ᅁ3RZHU&RQYHUWHUV ᅁ Synchronous Rectifiers Absolute Maximum Ratings (Tc=25°C unless otherwise noted) Parameter Symbol Ratings Unit Drain Source Voltage V DS V Gate Source Voltage V GS ±20 V Drain Current Continuous @ T C = 25°C I D 200 A @ T C = 100°C 126 Drain Current Pulsed@ T C = 25°C I DM 800 A Single Pulse Avalanche Energy EAS 245 mJ Single Pulse Avalanche Current IAS A Maximum Power Dissipation P D 139 W Storage Temperature Range T STG -55 to +150 Operating Junction Temperature Range T J -55 to +150 Thermal Resistance Junction to Case R θ JC 0.68 °C/W DAM200N30C Note3 $XJ
Electrical Characteristics @ T J =25°C (unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Unit OFF Characteristics Drain -Source Breakdown Voltage BV DSS V GS =0V᧨I DS =250uA V Zero Gate Voltage Drain Current I DSS V GS =0V᧨V DS =27V uA Gate -Body Leakage I GSS V GS =±20V᧨V DS =0V ±100 nA ON Characteristics Gate Threshold Voltage V TH V DS GS DS =250uA 1.6 2.5 V Static Drain -Source On-Resistance R DS(on) V GS =10V᧨I DS =30A 1.7 2.1 mΩ Dynamic Characteristics Input Capacitance C iss V DS =25V V GS =0V Freq.= 1MHz 7720 11000 pF Output Capacitance C oss 945 1400 Reverse Transfer Capacitance C rss 435 650 Switching Characteristics Turn -On Delay Time T d(on) V DD =15V V GS =10V R G =3.3Ω I DS =1A ns Rise Time T r Turn -Off Delay Time T d(off) 105 200 Fall Time T f Total Gate Charge Q g V DS =15V V GS =4.5V I DS =10A 120 nC Gate to Source Charge Q gs Gate to Drain Charge Q gd Drain -Source Diode Characteristics Diode Forward Voltage V SD V GS =0V᧨I S =1A V Notes: 1.Pulse Test: Pulse Width ʀʀ 300 ˩s, Duty Cycle ʀ 2%. 2. V DD =25V,V GS =10V,L=0.1mH,I AS =70A.,R G =25Ω, Starting T J =25°C DAM200N30C $XJ 3. R JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R JC is guaranteed by design while R CA is determined by the user's board design. R JA shown below for single device operation on FR-4 in still air.
TC , Case Temperature (Ċ) ID , Continuous Drain Current (A) Fig.1 Continuous Drain Current vs. TC TJ , Junction Temperature ( Ċ) Normalized Gate Threshold Voltage (V) Fig.3 Normalized Vth vs. TJ Square Wave Pulse Duration (s) Normalized Thermal Response (Rș-&) Fig.5 Normalized Transient Impedance TJ , Junction Temperature (Ċ) Normalized On Resistance (m) Fig.2 Normalized RDSON vs. TJ Qg , Gate Charge (nC) VGS , Gate to Source Voltage (V) Fig.4 Gate Charge Waveform ID , Continuous Drain Current (A) VDS , Drain to Source Voltage (V) Fig.6 Maximum Safe Operation Area DACO SEMICONDUCTOR CO., LTD. Typical Characteristics ZZZGDFRVHPLFRPWZ $XJ DAM200N30C
Fig.7 Switching Time Waveform Fig.8 EAS Waveform DACO SEMICONDUCTOR CO., LTD. ZZZGDFRVHPLFRPWZ $XJ Typical Characteristics DAM200N30C Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% IAS VGS BVDSS VDD EAS= 1