DAM13P60B DACO | Alldatasheet
Document overview
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Technical content
Features
ᅁVDSS = -60V ᅁRDS(ON) Typ.54mΩ @ VGS = -10V ᅁFully Avalanche Rated ᅁPb Free & RoHS Compliant
Applications
ᅁBacklighting ᅁ3RZHU&RQYHUWHUV ᅁSynchronous Rectifiers Absolute Maximum Ratings (Tc=25°C unless otherwise noted) Parameter Symbol Ratings Unit Drain Source Voltage VDS -60 V Gate Source Voltage VGS ±25 V Drain Current Continuous @ TC = 25°C ID -13 A @ TC = 100°C -8 Drain Current Pulsed@ TC = 25°C IDM -52 A Single Pulse Avalanche Energy EAS 31 mJ Single Pulse Avalanche Current IAS -25 A Maximum Power Dissipation PD 20 W Storage Temperature Range TSTG -50 to +150 °C Operating Junction Temperature Range TJ -50 to +150 °C Thermal Resistance Junction to Case RθJC 6.1 °C/W Aug.2017 DAM13P60B Note3
Electrical Characteristics @ T J =25°C (unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Unit OFF Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V᧨IDS=-250uA -60 - - V Zero Gate Voltage Drain Current IDSS VGS=0V᧨VDS=-60V - - -1 uA Gate-Body Leakage IGSS VGS=±25V᧨VDS=0V - - ±100 nA ON Characteristics Gate Threshold Voltage VTH VDS=VGS᧨IDS=-250uA -1.2 -1.6 -2.2 V Static Drain-Source On-Resistance RDS(on) VGS=-10V᧨IDS=-6A - 54 68 mΩ Dynamic Characteristics Input Capacitance Ciss VDS=-30V VGS=0V Freq.=1MHz - 870 1260 pF Output Capacitance Coss - 70 100 Reverse Transfer Capacitance Crss - 42 60 Switching Characteristics Turn-On Delay Time Td(on) VDD=-30V VGS=-10V RG =6Ω IDS=-1A - 8.3 16 ns Rise Time Tr - 29.6 56 Turn-Off Delay Time Td(off) - 51.7 98 Fall Time Tf - 15.6 30 Total Gate Charge Qg VDS=-30V VGS=-10V IDS=-6A - 16.4 24 nC Gate to Source Charge Qgs - 2.8 5.6 Gate to Drain Charge Qgd - 3.6 7 Drain-Source Diode Characteristics Diode Forward Voltage VSD VGS=0V᧨IS=-1A - - -1 V Notes: 1.Pulse Test: Pulse Width ʀʀ 300 ˩s, Duty Cycle ʀ 2%. 2. VDD=-25V,VGS=-10V,L=0.1mH,IAS=-25A.,RG=25Ω, Starting TJ=25°C 3. R JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R R JC is guaranteed by design while R CA is determined by the user's board design. R JA shown below for single device operation on FR-4 in still air. Aug.2017 DAM13P60B
TC , Case Temperature (Ċ) -ID , Continuous Drain Current (A) Fig.1 Continuous Drain Current vs. TC TJ , Junction Temperature ( Ċ) Normalized Gate Threshold Voltage (V) Fig.3 Normalized Vth vs. TJ Square Wave Pulse Duration (s) Normalized Thermal Response (R/g537/g45/g38) Fig.5 Normalized Transient Impedance TJ , Junction Temperature (Ċ) Normalized On Resistance (m/g159) Fig.2 Normalized RDSON vs. TJ Qg , Gate Charge (nC) -VGS , Gate to Source Voltage (V) Fig.4 Gate Charge Waveform -ID , Continuous Drain Current (A) -VDS , Drain to Source Voltage (V) Fig.6 Maximum Safe Operation Area DACO SEMICONDUCTOR CO., LTD. Typical Characteristics ZZZGDFRVHPLFRPWZ $XJ DAM13P60B
Fig.7 Switching Time Waveform Fig.8 EAS Waveform DACO SEMICONDUCTOR CO., LTD. ZZZGDFRVHPLFRPWZ $XJ Typical Characteristics DAM13P60B