DAM120N80C DACO | Alldatasheet
Document overview
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Technical content
Features
ᅁ V DSS = 80V ᅁ R DS(ON) Typ.3.2mΩ @ V GS = 10V ᅁ Fully Avalanche Rated ᅁ Pb Free & RoHS Compliant
Applications
ᅁ Backlighting ᅁ3RZHU&RQYHUWHUV ᅁ Synchronous Rectifiers Absolute Maximum Ratings Parameter Symbol Ratings Unit Drain Source Voltage V DS V Gate Source Voltage V GS +20/-12 V Drain Current Continuous @ T C = 25°C I D 120 A @ T C = 100°C Drain Curre nt Pulsed@ T C = 25°C I DM 480 A Single Pulse Avalanche Energy EAS 245 mJ Single Pulse Avalanche Current IAS A Maximum Power Dissipation P D 184 W Storage Temperature Range T STG 50 to +150 Operating Junction Temperature Range T J -50 to +150 Thermal Resistance Junction to Case R θ JC 0.68 °C/W DAM120N80C Note3 $XJ (Tc=25° C unless otherwise noted)
Electrical Characteristics @ T J =25°C (unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Unit OFF Characteristics Drain -Source Breakdown Voltage BV DSS V GS =0V᧨I DS =250uA V Zero Gate Voltage Drain Current I DSS V GS =0V᧨V DS =80V uA Gate -Body Leakage I GSS V GS =20V᧨V DS =0V 100 nA ON Characteristics Gate Threshold Voltage V TH V DS GS DS =250uA 1.6 2.5 V Static Drain -Source On-Resistance R DS(on) V GS =10V᧨I DS =20A 3.2 3.9 mΩ Dynamic Characteristics Input Capacitance C iss V DS =25V V GS =0V Freq.= 1MHz 5160 10200 pF Output Capacitance C oss 1346 2700 Reverse Transfer Capacitance C rss Switching Characteristics Turn -On Delay Time T d(on) V DD =40V V GS =10V R G =6Ω I DS =1A ns Rise Time T r Turn -Off Delay Time T d(off) Fall Time T f Total Gate Charge Q g V DS =64V V GS =10V I DS =10A 132 nC Gate to Source Charge Q gs 10.2 Gate to Drain Charge Q gd Drain -Source Diode Characteristics Diode Forward Vo ltage V SD V GS =0V᧨I S =1A V Notes: 1.Pulse Test: Pulse Width ʀʀ 300 ˩s, Duty Cycle ʀ 2%. 2. V DD =25V,V GS =10V,L=0.1mH,I AS =70A.,R G =25Ω, Starting T J =25°C DAM120N80C $XJ 3. R JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R JC is guaranteed by design while R CA is determined by the user's board design. R JA shown below for single device operation on FR-4 in still air.
TC , Case Temperature (Ċ) ID , Continuous Drain Current (A) Fig.1 Continuous Drain Current vs. TC TJ , Junction Temperature ( Ċ) Normalized Gate Threshold Voltage (V) Fig.3 Normalized Vth vs. TJ Square Wave Pulse Duration (s) Normalized Thermal Response (Rș-&) Fig.5 Normalized Transient Impedance TJ , Junction Temperature (Ċ) Normalized On Resistance (m) Fig.2 Normalized RDSON vs. TJ Qg , Gate Charge (nC) VGS , Gate to Source Voltage (V) Fig.4 Gate Charge Characteristics ID , Drain Current (A) VDS , Drain to Source Voltage (V) Fig.6 Maximum Safe Operation Area DACO SEMICONDUCTOR CO., LTD. Typical Characteristics ZZZGDFRVHPLFRPWZ 0DU DAM120N80C
Fig.7 Switching Time Waveform Fig.8 Gate Charge Waveform DACO SEMICONDUCTOR CO., LTD. ZZZGDFRVHPLFRPWZ 0DU Typical Characteristics DAM120N80C Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10%