DAM100N100C DACO | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
Features
ᅁ V DSS = 100V ᅁ R DS(ON) Typ.5.5mΩ @ V GS = 10V ᅁ Fully Avalanche Rated ᅁ Pb Free & RoHS Compliant
Applications
ᅁ Backlighting ᅁ3RZHU&RQYHUWHUV ᅁ Synchronous Rectifiers Absolute Maximum Ratings (Tc=25°C unless otherwise noted) Parameter Symbol Ratings Unit Drain Source Voltage V DS 100 V Gate Source Voltage V GS V Drain Current Continuous @ T C = 25°C I D 100 A @ T C = 100°C Drain Curre nt Pulsed@ T C = 25°C I DM 400 A Single Pulse Avalanche Energy EAS 320 mJ Single Pulse Avalanche Current IAS A Maximum Power Dissipation P D 184 W Storage Temperature Range T STG -50 to +150 Operating Junction Temperature Range T J -50 to +150 Thermal Resistance Junction to Case R θ JC 0.68 °C/W DAM100N100C Note3 $XJ +20/-12
Electrical Characteristics @ T J =25°C (unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Unit OFF Characteristics Drain -Source Breakdown Voltage BV DSS V GS =0V᧨I DS =250uA 100 V Zero Gate Voltage Drain Current I DSS V GS =0V᧨V DS =100V uA Gate -Body Leakage I GSS V GS =20V᧨V DS =0V 100 nA ON Characteristics Gate Threshold Voltage V TH V DS GS DS =250uA 1.6 2.5 V Static Drain -Source On-Resistance R DS(on) V GS =10V᧨I DS =20A 5.5 6.5 mΩ Dynamic Characteristics Input Capacitance C iss V DS =25V V GS =0V Freq.= 1MHz 110 7500 pF Output Capacitance C oss 1705 4200 Reverse Transfer Capacitance C rss 178 220 Switching Characteristics Turn -On Delay Time T d(on) V DD =50V V GS =10V R G =6Ω I DS =1A ns Rise Time T r 19.8 Turn -Off Delay Time T d(off) Fall Time T f Total Gate Charge Q g V DS =80V V GS =10V I DS =10A 58.2 100 nC Gate to Source Charge Q gs 9.2 Gate to Drain Charge Q gd 20.8 Drain -Source Diode Characteristics Diode Forward Vo ltage V SD V GS =0V᧨I S =1A V Notes: 1.Pulse Test: Pulse Width ʀʀ 300 ˩s, Duty Cycle ʀ 2%. 2. V DD =25V,V GS =10V,L=0.1mH,I AS =80A.,R G =25Ω, Starting T J =25°C DAM100N100C $XJ 3. R JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R JC is guaranteed by design while R CA is determined by the user's board design. R JA shown below for single device operation on FR-4 in still air.
T C , Case Temperature (Ċ) ID , Continuous Drain Current (A) Fig.1 Continuous Drain Current vs. T C T J , Junction Temperature ( Ċ) Normalized Gate Threshold Voltage (V) Fig.3 Normalized Vth vs. T J Square Wave Pulse Duration (s) Normalized Thermal Response (R ș-& Fig.5 Normalized Transient Impedance T J , Junction Temperature (Ċ) Normalized On Resistance (m Fig.2 Normalized RDSON vs. T J Qg , Gate Charge (nC) V GS , Gate to Source Voltage (V) Fig.4 Gate Charge Characteristics ID , Drain Current (A) V DS , Drain to Source Voltage (V) Fig.6 Maximum Safe Operation Area DACO SEMICONDUCTOR CO., LTD. Typical Characteristics ZZZGDFRVHPLFRPWZ DAM100N100C Aug.2017
Fig.7 Switching Time Waveform Fig.8 Gate Charge Waveform DACO SEMICONDUCTOR CO., LTD. ZZZGDFRVHPLFRPWZ 1RY Typical Characteristics DAM100N100C Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10%