DALC112S1 STMICROELECTRONICS | Alldatasheet
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Technical content
DALC112S1 January 1998 - Ed: 4 IEC1000-4-2level 3 8 kV (air discharge) 6 kV (contactdischarge) COMPLIESWITH THE FOLLOWINGSTANDARDS : ARRAYOF 12 DIODESFOR ESDPROTECTION. PEAK REVERSE VOLTAGE V RRM = 18V PER DIODE. VERYLOW CAPACITANCE PER DIODE: C < 5pF. VERY LOW LEAKAGECURRENT : I R <2 µA.
FEATURES
Application Specific Discretes A.S.D.TM Where ESD protection for high speed datalines is required : LAN / WAN equipment Computer I/O Graphic video port Set top box I/O MAIN APPLICATIONS ARRAY of 12 diodes configured by cells of 2 diodes, each cell being used to protect signal line from transient overvoltagesby clamping action. Its very low capacitance allows to protect fast signals with no distortion. It is particularlysuited for the protection of graphic video ports.
DESCRIPTION
Symbol Parameter Value Unit VRRM Peak reverse voltage per diode 18 V Tstg Tj Storage temperaturerange Maximum junctiontemperature -55 to + 150 150 ABSOLUTE MAXIMUM RATINGS (Tamb =25°C). Symbol Parameter Typ. Max. Unit VF Forward voltage I F = 50 mA 1.3 V IR Reverse leakage current per diode V R =1 5V 2 µA C Input capacitance between Line and GND Vcc = 5 V, VRMS = 30 mV, F = 1 MHz (see figure 1 below) 7p F ELECTRICAL CHARACTERISTICS (Tamb =25 °C). TYPICAL APPLICATION Vcc DALC112S1 Fig 1 :Input capacitance measurement +VCC connected between REF1 and REF2 Input applied : Vcc = 5V, VRMS =3 0m V ,F=1M H z G I/O VCC REF2 REF1 DALC112S1
SO8 (Plastic) Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringementof patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all informationpreviously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap- proval of STMicroelectronics. 1998 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada- China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. REF. DIMENSIONS Millimetres Inches A 1.75 0.069 a1 0.1 0.25 0.004 0.010 a2 1.65 0.065 b 0.35 0.48 0.014 0.019 b1 0.19 0.25 0.007 0.010 C 0.50 0.020 c1 45 °(typ) D 4.8 5.0 0.189 0.197 E 5.8 6.2 0.228 0.244 e 1.27 0.050 e3 3.81 0.150 F 3.8 4.0 0.15 0.157 L 0.4 1.27 0.016 0.050 M 0.6 0.024 S8 ° (max) Type Marking OrderCode Packaging(Base Qty) DALC112S1 DALC12 DALC112S1 DALC112S1RL tube (100) tape & reel (2500) MARKING ORDER CODE RL = tape& reel (2500 pcs). = tube (100 pcs). DALC 1 12 S 1 RL Version Diode Array Low Capacitance Nb. of Diodes PACKAGING: Preferredpackaging is tape and reel. DALC112S1