DAHF075G120SA DACO | Alldatasheet
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Ɍ!Low Switching Losses Ɍ!Super Fast Diodes Ɍ!34mm Fast Switching Trench / Field Stop IGBT Technology Symbol Rated Value Unit VCES 1200 V VGES ±20 V IC,nom. 75 ICRM 150 A Ptot 395 W Viso 3000 V TVJ op Ē40jĐ150 ഒ Tstg Ē40jĐ125 ഒ Module Base to Heatsink (M6) 3 j5 Busbar to Terminal (M5) 2.5 j5 Temperature under switching conditions Storage Temperature Mounting Torque N.m Item Collector-Emitter Voltage Gate-Emitter Peak Voltage Continuous DC Collector Current Total Power Dissipation 7&᧹ഒ tp =1ms Continuous DC Forward Current Repetitive Peak Forward Current tp =1ms IF IFRM A A 150 Repetitive Peak Collector Current A 79-᧹ഒ 1 2 3 Package Outlines 'LPHQVLRQVLQPP PP Circuit Diagram Headline 5HY HD-9434 Isolation Voltage RMS, f=50Hz, t=1min 80±0.5 94±1 17±0.5 6.4±0.5 92±0.5 x 31.5±0.5 23±0.523±0.5 2.8±0.3 x 0.5±0.2 plug in depth 7.5±0.5mm 5.5±0.4 30.7±1 29.5±1 22±1 1.5±0.5 28.9±0.5 4.9±0.5 13±0.5 34±0.5 25.5±0.5 16.6±0.5 Ø6.4±0.3
DACO SEMICONDUCTOR CO., LTD. ZZZGDFRVHPLFRPWZ Preliminary Data ˍ Electrical Characteristics DAHF075G120SA 5HY Characteristics Symbol Min. Typ. Max. Unit IC =75A, VGE =15V T vj =25°C 1.85 2.15 IC =75A, VGE =15V T vj =125°C 2.15 IC =75A, VGE =15V T vj =150°C 2.25 Gate threshold voltage VGEth 5.2 5.8 6.4 V Gate charge QG 0.57 μC Internal gate resistor RGint 9 /g58 Input capacitance Cies 9.7 nF Output capacitance Coes 0.318 nF Reverse transfer capacitance Cres 0.15 nF Collector-emitter cut-off current ICES 1m A Gate-emitter leakage current IGES 100 nA IC =75A, VCE =600V T vj =25°C 0.22 VGE = ±15V T vj =125°C 0.24 RGon =2.2/g58 Tvj =150°C 0.24 IC =75A, VCE =600V T vj =25°C 0.06 VGE = ±15V T vj =125°C 0.07 RGon =2.2/g58 Tvj =150°C 0.075 IC =75A, VCE =600V T vj =25°C 0.32 VGE = ±15V T vj =125°C 0.4 RGoff =2.2/g58 Tvj =150°C 0.42 IC =75A, VCE =600V T vj =25°C 0.08 VGE = ±15V T vj =125°C 0.115 RGoff =2.2/g58 Tvj =150°C 0.125 IC =75A, VCE =600V, LS =30nH T vj =25°C 3.3 VGE = ±15V, di/dt =1900A/μs (Tvj =150°C) T vj =125°C 6.8 RGon =2.2/g58 Tvj =150°C 7.8 IC =75A, VCE =600V, LS =30nH T vj =25°C 4 VGE = ±15V, du/dt =3700V/μs (Tvj =150°C) T vj =125°C 6.5 RGoff =2.2/g58 Tvj =150°C 7 VGE /g10015V, VCC =800V VCEmax =VCES - LsCE ·di/dt Thermal resistance, junction to case RthJC 0.38 °C/W Thermal resistance, case to heatsink RthCH 0.083 °C/W External gate resistance RGext 2.2 20 /g58Tvj =25°C per IGBT SC data ISC Turn-off energy loss per pulse tP /g10010μs, Tvj =150°C Eoff per IGBT Turn-on energy loss per pulse mJEon Fall time, inductive load tf Turn-off delay time, inductive load td off Turn-on delay time, inductive load td on Rise time, inductive load tr Collector-emitter saturation voltage V IC =2.4mA, VCE =VGE, Tvj =25°C VGE= -15 V... +15 V Tvj =25°C VCE sat μs μs A270 Test Conditions mJ f = 1MHz, Tvj =25°C, VCE =25V, VGE =0V μs μs f = 1MHz, Tvj =25°C, VCE =25V, VGE =0V f = 1MHz, Tvj =25°C, VCE =25V, VGE =0V VCE =1200V, VGE =0V, Tvj =25°C VCE =0V, VGE =20V, Tvj =25°C
DACO SEMICONDUCTOR CO., LTD. ZZZGDFRVHPLFRPWZ Preliminary Data ˍ Diode Ratings & Characteristics ˍ Module Ratings & Characteristics DAHF075G120SA 5HY Characteristics Symbol Test Conditions Unit Material of module baseplate Internal isolation basic insulation (class 1, IEC 61140) terminal to heatsink terminal to terminal terminal to heatsink terminal to terminal Comperative tracking index CTI Clearance Value Cu Al2O3 Creepage distance mm mm 9.5 >200 Characteristics Symbol Unit Repetitive peak reverse voltage V RRM V Continuous DC forward current I F A Repetitive peak forward current I FRM A Characteristics Symbol Min. Typ. Max. Unit IF =75A, VGE =0V T vj =25°C 2 2.15 IF =75A, VGE =0V T vj =125°C 1.95 IF =75A, VGE =0V T vj =150°C 1.95 IF =75A, -diF/dt =1900A/μs (Tvj=150°C) T vj =25°C 60 VR =600V T vj =125°C 65 VGE = -15V T vj =150°C 70 IF =75A, -diF/dt =1900A/μs (Tvj=150°C) T vj =25°C 5.3 VR =600V T vj =125°C 10.8 VGE = -15V T vj =150°C 12.8 IF =75A, -diF/dt =1900A/μs (Tvj=150°C) T vj =25°C 3 VR =600V T vj =125°C 4.5 VGE = -15V T vj =150°C 5 Reverse Recovery Time Trr 94 ns Thermal resistance, junction to case R thJC 0.58 °C/W Thermal resistance, case to heatsink R thCH 0.125 °C/W Temperature under switching conditions T vj op -40 150 °C Recovered charge μC Reverse recovery energy mJ per diode per diode Qr Erec IF =75A, -diF/dt =1900A/μs, VR =600V, VGE = -15V, Tvj=25°C A²sI²tI²t - value Forward voltage V F V APeak reverse recovery current Test Conditions Value Tvj =25°C 1200 150 IRM 1200 1100 tP =1ms VR =0V, tP =10ms, Tvj =125°C VR =0V, tP =10ms, Tvj =150°C Test Conditions
DACO SEMICONDUCTOR CO., LTD. DAHF075G120SA Typical Characteristics ZZZGDFRVHPLFRPWZ Fig.1 Output characteristic IGBT,Inverter (typical) Fig.3 Transfer characteristic IGBT,Inverter (typical) Fig.4 Switching losses IGBT,Inverter (typical) Fig.5 Switching losses IGBT,Inverter (typical) Fig.7 Reverse bias safe operating area IGBT,Inverter (RBSOA) Fig.8 Forward characteristic of Diode, Inverter (typical) Preliminary Data Fig.6 Transient thermal impedance IGBT,Inverter 105 120 135 150 Fpo -Uwk!>!236±D Fpgg-Uwk!>!236±D Fpo -Uwk!>!261±D Fpgg-Uwk!>!261±D Eon = f (IC), Eoff = f (IC) VGE = ±15 V, RGon = 2.2 ʈ, RGoff = 2.2 ʈ, VCE = 600 V 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 105 120 135 150 WHF !>!2:W WHF !>!28W WHF !>!26W WHF !>!24W WHF !>!22W WHF !>!:W ,& I 9&( 7YM & 105 120 135 150 Uwk!>!36±D Uwk!>!236±D Uwk!>!261±D ,& I 9*( 9&( 9 Fpo -Uwk!>!236±D Fpgg-Uwk!>!236±D Fpo -Uwk!>!261±D Fpgg-Uwk!>!261±D (RQ I (RII I 0,1 1 10 0,001 0,01 0,01 0,1 SuiKD ;JHCU 5WK-& I W Fig.2 Output characteristic IGBT,Inverter (typical) 200 400 600 800 1000 1200 1400 100 125 150 175 200 JD-Npevm JD-Dijq ,& I 9&( 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 100 Uwk!>!36±D Uwk!>!236±D Uwk!>!261±D ,) I ,& I 9&( 9*( 9 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 105 120 135 150 Uwk!>!36±D Uwk!>!236±D Uwk!>!261±D 5HY
DACO SEMICONDUCTOR CO., LTD. DAHF075G120SA Typical Characteristics ZZZGDFRVHPLFRPWZ Fig.9 Switching losses Diode, Inverter (typical) Fig.11 Transient thermal impedance Diode, Inverter Preliminary Data Fig.10 Switching losses Diode, Inverter (typical) 105 120 135 150 Fsfd-Uwk!>!236±D Fsfd-Uwk!>!261±D (UHF I 5*RQ ʈ9&( 9 Fsfd-Uwk!>!236±D Fsfd-Uwk!>!261±D (UHF I ,) $9&( 9 0,1 0,001 0,01 0,01 0,1 SuiKD ;Ejpef 5WK-& I W 5HY
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