DAGNH1501200 DACO | Alldatasheet
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Ɍ!Low switching loss Ɍ!Superfast diodes Ɍ!Fast switching IGBT trench technology Sy mbol Rated Value Unit VCES 1200 V VGES ±20 V IC,nom. 150 ICRM 300 A Ptot 780 W Viso 3600 V TJ Ē40jĐ150 ഒ Tstg Ē40jĐ125 ഒ Module Base to Heatsink 5 Busbar to Terminal 5 Junction Temperature Range Storage Temperature Range Mounting Torque N.m Item Collector-Emitter Voltage Gate-Emitter Voltage DC-Collector Current Total Power Dissipation Isolation Voltag če Terminal to Base, AC 1 min. Ď 7&᧹ഒ tp =1ms DC Forward Current Repetitive Peak Forward. Current tp =1ms IF IFRM A A 150 300 Repetitive Peak Collector Current A
DACO SEMICONDUCTOR CO., LTD. DAGNH1501200 ZZZGDFRVHPLFRPWZ -DQ ˍ Electrical Characteristics ˍ Free Wheeling Diode Ratings & Characteristics ˍ Thermal Characteristics ᧤79-᧹ഒ᧥ Symbol Test Conditions Min. Typ. Max. Unit ICES VCEĢ1200V VGEĢ0V - - 1000 ͔A IGES VGEĢ20V VCEĢ0V - - 400 nA VCEčsat Ď ICĢ150A ,VGEĢ15V ̺ 2.2 2.8 V VGEčthĎ VCEĢVGE, ICĢ4mA 4.5 5.5 6.5 V Cies -2 8- n F Rise Time t r -0 . 1 6- Turn-On Time t d,on -0 . 3 5- Fall Time t f -0 . 0 6- Turn-Off Time t d,off -0 . 5 4- Symbol Test Conditions Min. Typ. Max. Unit VF IFĢ150A, VGEĢ0V - 1.8 2.3 V Symbol Test Conditions Min. Typ. Max. Unit IGBT - - 0.20 Diode - - 0.35 ഒ/W VCCĢ600V ICĢ150A RGĢȍ VGEĢ±15V Characteristic Junction to CaseThermal Impedance R thčj-c Ď Characteristic Peak Forward Voltage 2.5 -ErecReverse Recovery Energy - Characteristic Collector-Emitter Cut-Off Current Gate-Emitter Leakage Current Collector-Emitter Saturation Voltage Gate-Emitter Threshold Voltage Switching Time ͔s Input Capacitance ᧤7&᧹ഒ᧥ IF=150A, RGĢȍ VR= 600V, VGE= -15V Output Capacitance C oes VCEĢ25V, VGEĢ0V, fĢ1MHz - 1.0 - nF mJ mJ- 15Turn-on Energy Loss Per Pulse Turn-off Energy Loss Per Pulse Eon Eoff ICĢ150A ,VCCĢ600V VGEĢ15V , RGĢȍ Inductive load 6.1 -QrRecovered Charge -IF=150A, RGĢȍ VR= 600V, VGE= -15V 65 -IRMPeak Reverse Recovery Current - IF=150A, RGĢȍ VR= 600V, VGE= -15V ᧤79-᧹ഒ᧥ mJ A VCEĢ25V, VGEĢ0V, fĢ1MHz Preliminary Data External Gate Resistance R G Per Switch 4.7 - 20 Reverse Transfer Capacitance C res VCEĢ25V, VGEĢ0V, fĢ1MHz - 0.67 - nF ns-- 150Reverse Recovery Time Trr IF= 150A, RGĢȍ VR= 300V, VGE= -15V
DACO SEMICONDUCTOR CO., LTD. DAGNH1501200 Typical Characteristics ZZZGDFRVHPLFRPWZ -DQ Fig.1 Output characteristic (Typical) Fig.2 Transfer characteristic (Typical) Fig.3 Forward characteristic of inverse diode (typical) Fig.5 Transient thermal impedance Fig.6 Reverse bias safe operation area (RBSOA) Preliminary Data Fig.4 Switching losses (Typical) 0 20 40 60 80 100 120 140 160 0 3,3 6,6 9,9 13,2 16,5 19,8 23,1