DAGNH1001200 DACO | Alldatasheet
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Ɍ!Low switching loss Ɍ!Superfast diodes Ɍ!Fast switching IGBT trench technology Sy mbol Rated Value Unit VCES 1200 V VGES ±20 V IC,nom. 100 ICRM 200 A Ptot 555 W Viso 3600 V TJ Ē40jĐ150 ഒ Tstg Ē40jĐ125 ഒ Module Base to Heatsink 5 Busbar to Terminal 5 Junction Temperature Range Storage Temperature Range Mounting Torque N.m Item Collector-Emitter Voltage Gate-Emitter Voltage DC-Collector Current Total Power Dissipation Isolation Voltag če Terminal to Base, AC 1 min. Ď 7&᧹ഒ tp =1ms DC Forward Current Repetitive Peak Forward. Current tp =1ms IF IFRM A A 100 200 Repetitive Peak Collector Current A
DACO SEMICONDUCTOR CO., LTD. DAGNH1001200 ZZZGDFRVHPLFRPWZ -DQ ˍ Electrical Characteristics ˍ Free Wheeling Diode Ratings & Characteristics ˍ Thermal Characteristics ᧤79-᧹ഒ᧥ Symbol Test Conditions Min. Typ. Max. Unit ICES VCEĢ1200V VGEĢ0V - 10 500 ͔A IGES VGEĢ20V VCEĢ0V - - 400 nA VCEčsat Ď ICĢ100A ,VGEĢ15V ̺ 2.2 2.8 V VGEčthĎ VCEĢVGE, ICĢ4mA 4.5 5.5 6.5 V Cies -1 8- n F Rise Time t r -0 . 2- Turn-On Time t d,on -0 . 3 9- Fall Time t f -0 . 0 5- Turn-Off Time t d,off -0 . 4 5- Symbol Test Conditions Min. Typ. Max. Unit VF IFĢ100A, VGEĢ0V - 1.8 2.3 V Symbol Test Conditions Min. Typ. Max. Unit IGBT - - 0.25 Diode - - 0.48 ഒ/W VCCĢ600V ICĢ100A RGĢȍ VGEĢ±15V Characteristic Junction to CaseThermal Impedance R thčj-c Ď Characteristic Peak Forward Voltage 0.6 -ErecReverse Recovery Energy - Characteristic Collector-Emitter Cut-Off Current Gate-Emitter Leakage Current Collector-Emitter Saturation Voltage Gate-Emitter Threshold Voltage Switching Time ms Input Capacitance ᧤7&᧹ഒ᧥ IF=100A, RGĢȍ VR= 600V, VGE= -15V Output Capacitance C oes VCEĢ25V, VGEĢ0V, fĢ1MHz - 0.74 - nF mJ mJ- 3.8 12Turn-on Energy Loss Per Pulse Turn-off Energy Loss Per Pulse Eon Eoff ICĢ100A ,VCCĢ600V VGEĢ15V , RGĢȍ Inductive load 3.8 -QrRecovered Charge -IF=100A, RGĢȍ VR= 600V, VGE= -15V 30 -IRMPeak Reverse Recovery Current - IF=100A, RGĢȍ VR= 600V, VGE= -15V ᧤79-᧹ഒ᧥ mJ A VCEĢ25V, VGEĢ0V, fĢ1MHz Preliminary Data External Gate Resistance R G Per Switch 4.7 - 10 Reverse Transfer Capacitance C res VCEĢ25V, VGEĢ0V, fĢ1MHz - 0.48 - nF ns-- 200Reverse Recovery Time Trr IF= 100A, RGĢȍ VR= 300V, VGE= -15V
DACO SEMICONDUCTOR CO., LTD. DAGNH1001200 Typical Characteristics ZZZGDFRVHPLFRPWZ -DQ Fig.1 Output characteristic (Typical) Fig.2 Transfer characteristic (Typical) Fig.3 Forward characteristic of inverse diode (typical) Fig.4 Switching losses (Typical) Fig.5 Transient thermal impedance Fig.6 Reverse bias safe operation area (RBSOA) Preliminary Data