DADMH040N120Z1B DACO | Alldatasheet

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Absolute Maximum Ratings (Tc=25°C unless otherwise noted) ◆ RDS(ON) θ < 322mΩ@ V = 10 VGS Viso 2500 V ◆ Isolation Type Package ◆ Electrically Isolation Base Plate Preliminary @ T C C ° 100 = @ T N-Channel Enhancement Mode Power MOSFET 1200V / 40A MMounting Torque (M5 Screw) d Nm3-5 2FW 5HY Isolation Voltage (A.C. 1 minute) between All Terminals and Baseplate ◆ Robotics and Servo Controls ◆ AC and DC Motor Drives ◆ Laser Drivers ◆ DC-DC Converters Switch-Mode and Resonant-Mode Power Supplies Avalanche Energy, Single Pulse EAS mJ420 ◆ TRR < 90ns HB-9434 Package Outlines 'LPHQVLRQVLQPP PP 80±0.5 94±1 17±0.5 6.4±0.5 92±0.5 x 31.5±0.5 23±0.523±0.5 2.8±0.3 x 0.5±0.2 plug in depth 7.5±0.5mm 5.5±0.4 30.7±1 29.5±1 22±1 1.5±0.5 28.9±0.5 4.9±0.5 13±0.5 34±0.5 25.5±0.5 16.6±0.5 Ø6.4±0.3 1 23

Parameter Symbol Conditions Min. Typ. Max. Unit OFF Characteristics Drain-Source Breakdown Voltage BV DSS VGS=0V，， ，，IDS=3mA 1200 - - V Zero Gate Voltage Drain Current IDSS VGS=0V，， ，，VDS=1200V - - 50 uA IGate-Source Leakage Current GSS nA ON Characteristics Gate Threshold Voltage VTH VDS=VGS，， ，，IDS=1mA 3.5 - 6.5 V Drain-Source On-State Resistance R DS(on) VGS=10V，， ，，IDS=20A - - 322 mΩ Dynamic Characteristics C e c n a t i c a p a C t u p n Iiss - 19 C e c n a t i c a p a C t u p t u Ooss - 1390 Reverse Transfer Capacitance Crss VDS=25V VGS=0V Freq.=1MHz - 262 pF Switching Characteristics t e m i T y a l e D n O - n r u Td(on) - 123 Rise Time tr - 44 t e m i T y a l e D f f O - n r u Td(off) - 155 Fall Time tf VDS=600V VGS=10V IDS=21A - 22 ns Total Gate Charge at 10V Qg - 372 Gate to Source Charge Qgs - 111 G a t e t o D r a i n C h a r g e Q gd VDS=600V VGS=10V IDS=20A - 147 nC Reverse Diode Characteristics Drain-Source Diode Forward Voltage VF TJ =25°C，， ，，IF=40A - - 2.5 V DACO SEMICONDUCTOR CO., LTD. DADMH040N120Z1B ZZZGDFRVHPLFRPWZ Electrical Characteristics @ TJ =25°C (unless otherwise specified) Forward Transconductance g fs - 56 -S Diode Continuous Forward Current Diode Pulsed Current Reverse Recovery time T RR I F,pulse I F - 130 A A ns Note1 Gate Resistance RG Ω- 2 0 - I -di/dt=100A/us F =20AdVR =100Vd VDS㕐㕐=20V， I D =20A RG =1Ω 2FW 5HY nF - RG =1Ω Q rr IRM Reverse Recovery Charge Peak Reverse Recovery Current - 195 - - 4.1 - nC A Notes: 1. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

Fig. 1. Maximum Drain Current vs. Case Temperature -50 -25 0 25 50 75 100 125 150 TC - Degrees Centigrade ID - Amperes Fig. 2. Output Characteristics @ TJ = 25oC VDS - Volts ID - Amperes 2FW 5HY DACO SEMICONDUCTOR CO., LTD. DADMH040N120Z1B Fig. 5. RDS(on) Normalized to ID = 20A Value vs. Drain Current ID - Amperes RDS(on) - Normalized Fig. 6. Input Admittance VGS - Volts ID - Amperes Fig. 4. Output Characteristics @ TJ = 125oC VDS - Volts ID - Amperes Fig. 3. Extended Output Characteristics @ TJ = 25oC VDS - Volts ID - Amperes Vgs=10V Vgs=10V 300 Vgs=10V 400 1.8 2.6 1.0 20 6010 2.2 1.4 7030 2.0 1.2 0.8 2.4 1.6 VGS =10V TJ = 25oC TJ = 125oC TJ = 125oC 25oC

Fig. 8. Gate Charge QG - NanoCoulombs VGS - Volts Fig. 10. Capacitance VDS - Volts Capacitance - PicoFarad s 2FW 5HY DACO SEMICONDUCTOR CO., LTD. DADMH040N120Z1B Fig. 9. Forward Voltage Drop of Intrinsic Diode IF - Amperes VF - Volts Fig. 7. Transconductance ID - Amperes g f s - Siemens 0 20 TJ = 25oC 125oC 100 300 150 350 02 0 0 400 50 250 VDS = 600V I D = 20A TJ = 125oC TJ = 25 oC 1NF 10 40 100NF 10PF 0 20 25 10NF 5 35 100PF Ciss Crss Coss f = 1 MHz Fig 11. Forward derating curve of reverse diode 100 125 150 175 Fig 12. Maximum Transient Thermal Impedance 0.001 0.01 0.1 0111.010.0100.01000.0 Pulse Width - Seconds Z(th)JC - K / W 6LQJOH3KDVH+DOI:DYH +]5HVLVWLYHRU,QGXFWLYH/RDG IF - Amperes TC - Degrees Centigrade

www.dacosemi.com.tw - 5 - Disclaimer Oct 2023 Rev. 1.0 DACO SEMICONDUCTOR CO., LTD. DADMH040N120Z1B DACO Semiconductor reserves the right to make modifications, enhancements, improvements, corrections, or other changes to this document and any product described herein without prior notice. DACO Semiconductor makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does DACO Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any liability, including without limitation special, consequential or incidental damages. Purchasers are responsible for its products and applications using DACO Semiconductor products, including compliance with all laws, regulations, and safety requirements or standards, regardless of any support or application information provided by DACO Semiconductor. “Typical” parameters that may be provided in DACO Semiconductor datasheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typical” must be validated for each customer application by the customer’s technical experts. DACO Semiconductor products are not designed, authorized, or warranted to be suitable for use in life support, life-critical or safety-critical systems, or equipment, nor in applications where failure or malfunction of DACO Semiconductor’s product can reasonably be expected to result in personal injury, death or severe property or environmental damage. DACO Semiconductor accepts no liability for the inclusion and/or use of DACO Semiconductor’s products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Purchasers who buy or use DACO Semiconductor products for any unintended or unauthorized applications are required to indemnify and absolve DACO Semiconductor, its suppliers, and distributors from any claims, costs, damages, expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that DACO Semiconductor was negligent regarding the design or manufacture of the part. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or by any information storage and retrieval system, or otherwise, without the prior written permission of DACO Semiconductor Co., Ltd.