DACSB400120CT DACO | Alldatasheet
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Technical content
Features
t)JHITVSHFDVSSFOUDBQBCMF t;FSPSFWFSTFSFDPWFSZDVSSFOU t)JHICBOEXJEUI - 1 - SiC SCHOTTKY DIODE TYPE 2×200A DACO SEMICONDUCTOR CO., LTD. DACSB400120CT -5 5 t o +175Operating Junction Temperature : +175-5 5 t oStorage Temperature : "QS Part Number Maximum Recurrent Peak Reverse Voltage 1200VDACSB400120CT 1200V Maximum DC Blocking Voltage Benefits
Applications
t.PUPSESJWFT t4XJUDINPEFQPXFSTVQQMJFT t&WDIBSHFST t4PMBSJOWFSUFST t8FMEJOHFRVJQNFOU t6OJQPMBSSFDUJöFS t;FSPTXJUDIJOHMPTT t)JHIFSFóDJFODZ IF,max VRRM V N-mMounting torque M6 Screw 3~4.7 Repetitive peak reverse voltage Tj=25 °C 1200 Non-repetitive peak forward current (per leg) TC=25 °C, tp=10 ȫs 6400 Surge non-repetitive forward current sine halfwave (per leg) IFSM TC=25 °C, tp=8.3 ms 1600 TC=150 °C, tp=8.3 ms 1000 Maximum Rating Symbol Conditions Value Unit Continuous forward current IF TC=135 °C 200 A t5FNQFSBUVSF*OEFQFOEFOU4XJUDIJOH#FIBWJPS t7%$7 t4NBMMFSIFBUTJOL t1BSBMMFMEFWJDFTXJUIPVUUIFSNBMSVOBXBZ t1PXFSGBDUPSDPSSFDUJPO t%JPEFTOVCCFS t"VUPNPUJWF tJOEVDUJPOIFBUJOH (per leg) TC=150 °C, tp=10 ȫs 4000 %JNFOTJPOT JO mm (1 mm = LUG Teminal Anode 1 Baseplate Common Cathode LUG Teminal Anode 2
www.dacosemi.com.tw - 2 - DACO SEMICONDUCTOR CO., LTD. DACSB400120CT min. typ. max. VDC 1,200 - - -1 . 61 . 8 -2 . 42 . 9 -1 01 3 0 - 140 1,400 Reverse current I R VR =1,200V, Tj =25 °C VR =1,200V, Tj =175 °C DC blocking voltage V Diode forward voltage VF IF =200A, Tj =25 °C IF =200A, Tj =175 °C Electrical Characteristics, at Tj=25 °C, unless otherwise specified. (per leg) Static Characteristics Symbol Conditions Values Unit ȫA Qrr - 617 - nC - 11,120 - -1 , 1 0 4 - -1 , 0 3 4 - RȧJC 0.07 oC/W pFVR=600V, f=1 MHz VR=1,000V, f=1 MHz Thermal Characteristics (per leg) Thermal resistance from junction to case Total capacitive charge VR=1,200V, Tj =25 °C Total capacitance C VR=0V, f=1 MHz AC Characteristics (per leg) typ. Static Characteristics Symbol Values Unit min. typ. max. Static Characteristics Symbol Conditions Values Unit Tj=25 °C Tj=25 °C Tj=25 °C Apr 2016
www.dacosemi.com.tw - 3 - DACO SEMICONDUCTOR CO., LTD. Typical Performance DACSB400120CT Forward Characteristics (parameterized on Tj) Reverse Characteristics (parameterized on Tj) Current Derating 120 160 200 240 IF (A) VF (V) 0.001 0.01 0.1 1.0 0 20 40 60 80 100 IR (mA) Volts (%) 120 160 200 25 75 125 175 IF (A) TC (°C) Capacitance Recovery Charge 2,780 5,560 8,340 11,120 13,900 0 1 10 100 1000 C (pF) VR (V) Tj =25°C 10 30 50 70 90 25°C 175°C 75°C 125°C 280 2.4 2.8 240 280 Single Phase,Half Wave 60Hz Res istive or Inductive Load Forward Surge Current Apr 2016 175°C 125°C 75°C 25°C IFSM (A) Cycles Numder of Cycles At 60Hz - Cycles 320 640 960 1,280 1,600 1 10 100 1,920 8.3ms Single Half Sine Wave JEDEC method Tj =25°C 130 195 260 325 390 Qrr (nC) VR (V) 650 455 Tj =25°C 520 585 0 150 300 450 600 750 900 1,050 1,200