DACMH120N1200 DACO | Alldatasheet
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Absolute Maximum Ratings (Tc=25°C unless otherwise noted) Ɍ!RDS(ON) < 25 P#9 9GS VIsolation Voltage (A.C. 1 minute) iso 4000 V MMounting torque (M5 Screw) d 3-5 Nm Ɍ! Isolation Type Package Ɍ! Electrically Isolation base plate -DQ @ T C C°100= @ T Preliminary HB-9434 A C B D HH I NN H M G JK L S R OP T U F E Q ',0(16,216 Ɍ! Power Converters Ɍ! Motor Drive Ɍ! Solar Inverters Ɍ! Switch Mode Power Supplies Ɍ! Battery Chargers 1 23
Parameter Symbol Conditions Min. Typ. Max. Unit OFF Characteristics Drain-Source Breakdown Voltage BV DSS VGS =0VǴǴǴǴIDS =0.3mA 1200 V Zero Gate Voltage Drain Current I DSS VGS =0VǴǴǴǴVDS =1200V 100 uA I egakaeL ydoB-etaG GSS VGS =20V ǴǴǴǴVDS =0V 500 nA ON Characteristics Gate Threshold Voltage V TH VDS =VGSǴǴǴǴIDS =8mA 2.0 2.5 V Drain-Source On-State Resistance R DS(on) VGS =20VǴǴǴǴIDS =120A 25 P Dynamic Characteristics C ecnaticapaC tupnI iss 4500 C ecnaticapaC tuptuO oss 276 Reverse Transfer Capacitance C rss VDS =800V VGS =0V Freq.=1MHz 60 pF Switching Characteristics t emiT yaleD nO-nruT d(on) - Rise Time t r 32 t emiT yaleD ffO-nruT d(off) Fall Time t f VDD=800V VGS =20V IDS =50A ns Total Gate Charge at 10V Q g Gate to Source Charge Q gs G a t e t o D r a i n C h a r g e Q gd VDS =800V VGS =20V IDS =50A nC Reverse Diode Characteristics Drain-Source Diode Forward Voltage V F TJ =25°CǴǴǴǴIF=120A - 6.5 V DACO SEMICONDUCTOR CO., LTD. Notes: 1. Pulse Test: Pulse Width 300͔s, Duty Cycle > 2%. ZZZGDFRVHPLFRPWZ Electrical Characteristics @ TJ =25°C (unless otherwise specified) -DQ Forward Transconductance g fs VDS - S Note1 Diode Continuous Forward Current Diode Pulsed Current Reverse Recovery time T RR I F,pulse I F - 300 135 A A ns Note1 Gate Resistance R G -1 . 6 2 . 9 I I F =0.5VdIR =1.0Ad RR =0.25A RG =2.5 ID =50A DACMH120N1200 - - - - - - - 20 3.5 28 - 20 - 170 =20VǴǴǴǴ VAC =25mV mJ Turn-On Switching Energy Turn-Off Switching Energy Eon Eoff VDD=600V ǴǴǴǴVGS =-5V/+20V ID =50A ǴǴǴǴRG(ext)=2.5 Load=142μH ǴǴǴǴTJ =150°C 1.6 - 0.6 - -